AP50G60W-HF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP50G60W-HF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 277 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 80 nS
Coesⓘ - Capacitancia de salida, typ: 160 pF
Qgⓘ - Carga total de la puerta, typ: 66 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AP50G60W-HF IGBT
AP50G60W-HF Datasheet (PDF)
ap50g60w-hf.pdf

AP50G60W-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesC High Speed Switching VCES 600V Low Saturation Voltage IC 40AVCE(sat),Typ.=2.5V@IC=40A RoHS Compliant & Halogen-FreeGCCTO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter
ap50g60sw.pdf

AP50G60SWRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PGEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitter Voltage 600 VVGE Gate-Emitter Vo
ap50g60sw-hf.pdf

AP50G60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesVCES 600VC High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=2.6V@IC=33A CG Built-in Fast Recovery DiodeC TO-3PG RoHS Compliant & Halogen-FreeEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emitte
ap50gt60sw-hf.pdf

AP50GT60SW-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORFeaturesCVCES 600V High Speed Switching IC 45A Low Saturation VoltageVCE(sat),Typ.=1.85V@IC=45A CGC TO-3P Built-in Fast Recovery DiodeEG RoHS Compliant & Halogen-FreeEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCES Collector-Emit
Otros transistores... APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP , APT50GN60BG , APT60GA60JD60 , IRGP4063-E , IRG7PH42UD-EP , APT47GA60JD40 , TGAN60N60F2DS , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , IRGP4062D-E .
History: SPT15N65T1 | IRG4BC30K | IXEN60N120 | IXSM30N60 | SII75N06 | MKI100-12F8 | SPM1006
History: SPT15N65T1 | IRG4BC30K | IXEN60N120 | IXSM30N60 | SII75N06 | MKI100-12F8 | SPM1006



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