TGAN40N60FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN40N60FD
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 231 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
trⓘ - Tiempo de subida, typ: 75 nS
Coesⓘ - Capacitancia de salida, typ: 125 pF
Encapsulados: TO3PN
Búsqueda de reemplazo de TGAN40N60FD IGBT
- Selección ⓘ de transistores por parámetros
TGAN40N60FD datasheet
tgan40n60fd.pdf
TGAN40N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60FD TO-3PN TGAN40N60FD RoHS Absolute Maximum Ratings
tgan40n60f2d.pdf
TGAN40N60F2D Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60F2D TO-3PN TGAN40N60F2D RoHS Absolute Maximum Ratings Parameter Symbol Va
tgan40n60f2ds.pdf
TGAN40N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Motor Inverter Device Package Marking Remark TGAN40N60F2DS TO-3PN TGAN40N60F2DS RoHS Absolute Maximum Ratings Parameter Symbol
tgan40n65f2ds.pdf
TGAN40N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN40N65F2DS TO-3PN
Otros transistores... APT25GN120BG , APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , IRGP4062D-E , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , FGH75T65UPD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 .
History: SG35N12DT
History: SG35N12DT
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
tip107 | 2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667





