TGAN15N120ND Todos los transistores

 

TGAN15N120ND - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN15N120ND
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 212 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 60 pF
   Paquete / Cubierta: TO3PN
     - Selección de transistores por parámetros

 

TGAN15N120ND Datasheet (PDF)

 ..1. Size:982K  trinnotech
tgan15n120nd.pdf pdf_icon

TGAN15N120ND

TGAN15N120NDNPT Trench IGBTFeatures: 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN15N120ND TO-3PN TGAN15N120ND RoHSAbsolute Maximum R

 4.1. Size:1014K  trinnotech
tgan15n120fdr.pdf pdf_icon

TGAN15N120ND

TGAN15N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark T

 8.1. Size:819K  trinnotech
tgan15s135fd.pdf pdf_icon

TGAN15N120ND

TGAN15S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Hea

Otros transistores... APT25GN120SG , IRGP4069D-E , IRGP4069-E , RJH60F5BDPQ-A0 , IRGP4062D-E , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , TGAN40N60FD , STGB10NB37LZ , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H .

History: TGAN20N150FD | T0850VB25E

 

 
Back to Top

 


History: TGAN20N150FD | T0850VB25E

TGAN15N120ND
  TGAN15N120ND
  TGAN15N120ND
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M

 

 

 
Back to Top

 

Popular searches

2n5457 | k3568 | 2sc1344 | cs840f | 2n3053 equivalent | 2n3569 | 2sd667 | 2sc1111

 


 
.