IRG7PH35U-EP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG7PH35U-EP
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 210
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 55
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.9
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 15
Capacitancia de salida (Cc), typ, pF: 60
Carga total de la puerta (Qg), typ, nC: 85
Paquete / Cubierta: TO247AD
Búsqueda de reemplazo de IRG7PH35U-EP - IGBT
IRG7PH35U-EP Datasheet (PDF)
irg7ph35u-ep.pdf
PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)
irg7ph35u.pdf
PD - 97479IRG7PH35UPbFINSULATED GATE BIPOLAR TRANSISTORIRG7PH35U-EPFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Maximum junction temperature 175 CI NOMINAL = 20A Square RBSOA 100% of the parts tested for ILMGTJ(max) = 175C Positive VCE (ON) temperature co-efficient Tight parameter distributionEVCE(on)
irg7ph35ud1m.pdf
IRG7PH35UD1MPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesC Low VCE (ON) trench IGBT TechnologyVCES = 1200V Low Switching Losses Square RBSOAIC = 25A, TC = 100C Ultra-Low VF Diode 1300Vpk Repetitive Transient CapacityGTJ(max) = 150C 100% of the Parts Tested for ILM
irg7ph35ud1.pdf
IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
irg7ph35ud.pdf
PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
irg7ph35ud1-ep.pdf
IRG7PH35UD1PbFIRG7PH35UD1-EPINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODEFOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONSFeaturesCVCES = 1200V Low VCE (ON) trench IGBT Technology Low Switching LossesI NOMINAL = 20A Square RBSOA Ultra-Low VF DiodeGTJ(max) = 150C 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for I
irg7ph35udpbf irg7ph35ud-ep.pdf
PD-96288IRG7PH35UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRG7PH35UD-EPULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) trench IGBT technologyVCES = 1200V Low switching losses Square RBSOAI NOMINAL = 20A 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficientGTJ(max) = 150C Ultra fast soft recovery co-pak diode T
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ