NGB8204A Todos los transistores

 

NGB8204A IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8204A

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 115 W

|Vce|ⓘ - Tensión máxima colector-emisor: 430 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 18 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 4500 nS

Coesⓘ - Capacitancia de salida, typ: 75 pF

Encapsulados: TO263

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NGB8204A datasheet

 ..1. Size:126K  onsemi
ngb8204a.pdf pdf_icon

NGB8204A

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

 0.1. Size:126K  1
ngb8204n ngb8204an.pdf pdf_icon

NGB8204A

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http //onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

 8.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8204A

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 8.2. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8204A

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

Otros transistores... APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , NGB18N40A , NGTB75N65FL2 , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K .

History: APT40GP90JDQ2 | TSG40N120CE | APT15GP90KG | IKP20N65F5 | APT200GN60J | GT60J323H | APT50GT60BRDQ2G

 

 

 

 

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