IRG7RC10FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRG7RC10FD datasheet

..1. Size:342K international rectifier
irg7rc10fd.pdf pdf_icon

PD - 97759 IRG7RC10FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE IC = 9.0A, TC = 100 C Features Low VCE(on) tsc > 3 s, Tjmax = 150 C G Zero VCE(on) temperature coefficient 3 s Short Circuit Capability VCE(on) typ. = 1.6V E Ultra Fast Soft Recovery Co-pak Diode @ IC = 5A Square RBSOA n-channel Benefits Ben

8.1. Size:300K international rectifier
irg7rc07sd.pdf pdf_icon

PD - 96425 IRG7RC07SDPbF Optimized for line frequency, 50/60Hz switching frequency Features C Standard speed IGBT for switching frequency less than 1KHz VCES = 600V Very low VCE (ON) Ultra fast soft recovery diode IC = 8.5A, TC = 100 C G VCE(on) typ. =1.2V@IC = 3A Benefits E High efficiency for line frequency applications n-channel Higher reliability from r

9.1. Size:237K international rectifier
irg7r313u.pdf pdf_icon

PD - 97484 IRG7R313UPbF PDP TRENCH IGBT Key Parameters Features VCE min 330 V l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery VCE(ON) typ. @ IC = 20A 1.35 V circuits in PDP applications IRP max @ TC= 25 C 160 A l Low VCE(on) and Energy per Pulse (EPULSETM) TJ max 150 C for improved panel efficiency l High repetitive peak current capability l Lead

Otros transistores... APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V , AOB5B60D , AP20GT60ASP-HF , GT30F125 , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 .