NTE3302 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTE3302
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 30 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 8 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 300 nS
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de NTE3302 IGBT
NTE3302 Datasheet (PDF)
nte3302.pdf

NTE3302Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3301.pdf

NTE3301Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3300.pdf

NTE3300Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD Low Saturation VoltageD Enhancement ModeD 20V Gate DriveApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . .
nte3303.pdf

NTE3303Insulated Gate Bipolar TransistorN-Channel Enhancement Mode,High Speed SwitchFeatures:D High Input ImpedanceD High SpeedD Low Saturation VoltageD Enhancement ModeApplications:D High Power SwitchingD Motor ControlAbsolute Maximum Raings: (TA = +25C unless otherwise specified)Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Otros transistores... AP28G40GEO , AP30G40GEO-HF , RJP4010AGE , RJP4009ANS , STGF7H60DF , RJP4301APP-00 , NTE3300 , RJP4301APP-M0 , GT30F126 , RJH60A83RDPP-M0 , RJH60D1DPP-E0 , RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG .
History: FGH20N60SFDTU-F085
History: FGH20N60SFDTU-F085



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