NGTB40N120S Todos los transistores

 

NGTB40N120S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGTB40N120S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 535 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 42 nS
   Coesⓘ - Capacitancia de salida, typ: 230 pF
   Paquete / Cubierta: TO247
 

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NGTB40N120S Datasheet (PDF)

 ..1. Size:86K  onsemi
 ngtb40n120s.pdf pdf_icon

NGTB40N120S

NGTB40N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co

 0.1. Size:84K  onsemi
 ngtb40n120swg.pdf pdf_icon

NGTB40N120S

NGTB40N120SWGIGBT - Inverter WeldingThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Trench construction, and provides superior performancein demanding switching applications, offering both low on statevoltage and minimal switching loss. The IGBT is well suited forwelding applications. Incorporated into the device is a soft and fasthttp://onsemi.co

 4.1. Size:145K  onsemi
 ngtb40n120fl2wg.pdf pdf_icon

NGTB40N120S

NGTB40N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softwww.on

 4.2. Size:176K  onsemi
 ngtb40n120lwg.pdf pdf_icon

NGTB40N120S

NGTB40N120LWGIGBTThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications. Offeringboth low on-state voltage and minimal switching loss, the IGBT iswell suited for resonant or soft switching applications. Incorporatedhttp://onsemi.cominto the device

MOSTRAR MÁS

Otros transistores... RJH60V1BDPP-M0 , SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , IHW20N120R3 , NGTB40N120SWG , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 .

History: TGH80N65F2DS | APT50GN60BG | IXGN200N60B3 | BSM100GB120DN2K | VS-GB150TH120N | IXST30N60BD1 | SG50N06DS

 

 
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