NGTB40N120SWG Todos los transistores

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NGTB40N120SWG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB40N120SWG

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 535

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 40

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 42

Capacitancia de salida (Cc), pF: 230

Empaquetado / Estuche: TO247

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NGTB40N120SWG Datasheet (PDF)

1.1. ngtb40n120fl2.pdf Size:148K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

1.2. ngtb40n120s.pdf Size:86K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http://onsemi.co

1.3. ngtb40n120ihr.pdf Size:181K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

1.4. ngtb40n120ihrwg.pdf Size:181K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http://onsemi.com well suited for resonant or soft switching appli

1.5. ngtb40n120flwg.pdf Size:193K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged

1.6. ngtb40n120swg.pdf Size:86K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120SWG IGBT - Inverter Welding This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast http://onsemi.co

1.7. ngtb40n120ihl.pdf Size:160K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.8. ngtb40n120fl2wg.pdf Size:148K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.on

1.9. ngtb40n120fl.pdf Size:193K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged

1.10. ngtb40n120ihlwg.pdf Size:160K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the devic

1.11. ngtb40n120lwg.pdf Size:176K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

1.12. ngtb40n120l.pdf Size:176K _igbt

NGTB40N120SWG
NGTB40N120SWG

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on-state voltage and minimal switching loss, the IGBT is well suited for resonant or soft switching applications. Incorporated http://onsemi.com into the device

Otros transistores... SGTN50A36FD , STGF10H60DF , STGF15H60DF , NGTB30N120L2 , NGTB30N120L2WG , NGTB40N120FL2 , NGTB40N120FL2WG , NGTB40N120S , IRGB14C40L , NGTB50N120FL2 , NGTB50N120FL2WG , NGTG40N120FL2 , NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 .

 


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