NGTB50N60FL2WG Todos los transistores

 

NGTB50N60FL2WG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB50N60FL2WG

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 417 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 47 nS

Coesⓘ - Capacitancia de salida, typ: 252 pF

Encapsulados: TO247

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NGTB50N60FL2WG datasheet

 ..1. Size:237K  onsemi
 ngtb50n60fl2wg.pdf pdf_icon

NGTB50N60FL2WG

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

 2.1. Size:237K  onsemi
 ngtb50n60fl2.pdf pdf_icon

NGTB50N60FL2WG

NGTB50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft www.ons

 3.1. Size:186K  onsemi
 ngtb50n60flwg.pdf pdf_icon

NGTB50N60FL2WG

NGTB50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 50 A, 600 V Low Switching Loss R

 4.1. Size:177K  onsemi
 ngtb50n60fwg.pdf pdf_icon

NGTB50N60FL2WG

NGTB50N60FWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Optimized for Very Low VCEsat 50 A, 600 V Low Switching Loss Reduces System Power Dissipation V

MOSTRAR MÁS

Otros transistores... NGTG40N120FL2WG , IKW75N65EL5 , IKZ75N65EL5 , IKW60N60H3 , IGW60N60H3 , NGTB40N60L2 , NGTB40N60L2WG , NGTB50N60FL2 , CRG15T120BNR3S , NGTB50N60S1 , NGTB50N60S1WG , NGTB50N65FL2 , NGTB50N65FL2WG , IRG8P60N120KD , TIG056BF-1E , STGF30H60DF , IKA08N65F5 .

 

 

 

 

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