STGF30H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGF30H60DF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 31 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO220F
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STGF30H60DF Datasheet (PDF)
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stgf30h60df.pdf
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STGF35HF60W, STGW35HF60W,STGFW35HF60W35 A, 600 V Ultrafast IGBTDatasheet - production dataFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses332211ApplicationsTO-247TO-220FP Welding High frequency converters111 Power factor correction321DescriptionTO-3PFThis Ultrafast IGBT is develope
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stgf3nc120hd.pdf
STGF3NC120HDN-CHANNEL 3A - 1200V TO-220FPFAST PowerMESH IGBT with Integral Damper DiodeTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGF3NC120HD 1200 V
stgf3nc120hd stgp3nc120hd.pdf
STGF3NC120HDSTGP3NC120HD7 A, 1200 V very fast IGBTFeatures Low on-voltage drop (VCE(sat))TAB High current capability Off losses include tail current High speed332211ApplicationTO-220FPTO-220 Home appliance LightingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal
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