STGF30H60DF Todos los transistores

 

STGF30H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGF30H60DF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 31 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de STGF30H60DF - IGBT

 

STGF30H60DF Datasheet (PDF)

 ..1. Size:1944K  st
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf

STGF30H60DF
STGF30H60DF

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 ..2. Size:1945K  st
stgf30h60df.pdf

STGF30H60DF
STGF30H60DF

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

 8.1. Size:657K  st
stgf30nc60s stgp30nc60s stgwf30nc60s.pdf

STGF30H60DF
STGF30H60DF

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

 8.2. Size:708K  st
stgf30m65df2.pdf

STGF30H60DF
STGF30H60DF

STGF30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Motor

 9.1. Size:633K  st
stgf35hf60w.pdf

STGF30H60DF
STGF30H60DF

STGF35HF60W, STGW35HF60W,STGFW35HF60W35 A, 600 V Ultrafast IGBTDatasheet - production dataFeatures Improved Eoff at elevated temperature Minimal tail current Low conduction losses332211ApplicationsTO-247TO-220FP Welding High frequency converters111 Power factor correction321DescriptionTO-3PFThis Ultrafast IGBT is develope

 9.2. Size:763K  st
stgb3nc120hd stgf3nc120hd stgp3nc120hd.pdf

STGF30H60DF
STGF30H60DF

STGB3NC120HDSTGF3NC120HD, STGP3NC120HD7 A, 1200 V very fast IGBT with ultrafast diodeFeaturesTAB High voltage capability High speed Very soft ultrafast recovery anti-parallel diode332211Applications TO-220FPTO-220 Home applianceTAB Lighting31DescriptionDPAKThis high voltage and very fast IGBT shows an excellent trade-off between l

 9.3. Size:1321K  st
stgb3hf60hd stgd3hf60hdt4 stgf3hf60hd stgp3hf60hd.pdf

STGF30H60DF
STGF30H60DF

STGB3HF60HD, STGD3HF60HDT4, STGF3HF60HD, STGP3HF60HD 4.5 A, 600 V very fast IGBT with Ultrafast diode Datasheet - production data Features Minimal tail current Low conduction and switching losses Ultrafast soft recovery antiparallel diode Applications Motor drive Description These devices are based on a new advanced planar technology concept to yield an I

 9.4. Size:279K  st
stgf3nc120hd.pdf

STGF30H60DF
STGF30H60DF

STGF3NC120HDN-CHANNEL 3A - 1200V TO-220FPFAST PowerMESH IGBT with Integral Damper DiodeTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGF3NC120HD 1200 V

 9.5. Size:637K  st
stgf3nc120hd stgp3nc120hd.pdf

STGF30H60DF
STGF30H60DF

STGF3NC120HDSTGP3NC120HD7 A, 1200 V very fast IGBTFeatures Low on-voltage drop (VCE(sat))TAB High current capability Off losses include tail current High speed332211ApplicationTO-220FPTO-220 Home appliance LightingDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top

 


STGF30H60DF
  STGF30H60DF
  STGF30H60DF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top