HGTD10N40F1S9A Todos los transistores

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HGTD10N40F1S9A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTD10N40F1S9A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75W

Tensión colector-emisor (Vce): 400V

Voltaje de saturación colector-emisor (Vce sat): 2.5V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 12A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 45

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO252AA

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HGTD10N40F1S9A Datasheet (PDF)

2.1. hgtd10n4.pdf Size:40K _harris_semi

HGTD10N40F1S9A
HGTD10N40F1S9A

HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL ?1.4s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications HGTD10N40F1S, HG

5.1. hgtd1n120bns hgtp1n120bn.pdf Size:92K _fairchild_semi

HGTD10N40F1S9A
HGTD10N40F1S9A

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC combin

Otros transistores... HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A , HGT1Y40N60A4 , HGT1Y40N60A4D , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , FGA25N120ANTD , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


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