KGF15N60FDA Todos los transistores

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KGF15N60FDA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KGF15N60FDA

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 15

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 15

Capacitancia de salida (Cc), pF: 90

Empaquetado / Estuche: TO220F

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KGF15N60FDA Datasheet (PDF)

1.1. kgf15n60fda.pdf Size:1547K _igbt_a

KGF15N60FDA
KGF15N60FDA

SEMICONDUCTOR KGF15N60FDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand Times ⋎5us(@TC=100℃) ·Extremel

4.1. kgf15n120kda.pdf Size:1561K _igbt_a

KGF15N60FDA
KGF15N60FDA

SEMICONDUCTOR KGF15N120KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Short Circuit Withstand

4.2. kgf15n120nds.pdf Size:1469K _igbt_a

KGF15N60FDA
KGF15N60FDA

SEMICONDUCTOR KGF15N120NDS TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior ·Soft current turn-off waveforms ·Extremely enhanc

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