RJQ6003DPM IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RJQ6003DPM datasheet

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Preliminary Datasheet RJQ6003DPM R07DS0846EJ0100 600V - 20A - IGBT and Diode Rev.1.00 High Speed Power Switching Aug 03, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching tr = 85 ns typ. (a

8.1. Size:115K renesas
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Preliminary Datasheet RJQ6008DPM R07DS0847EJ0100 600V - 10A - IGBT and Diode Rev.1.00 High Speed Power Switching Jul 17, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode in one package Trench gate and thin wafer technology High speed switching Outline RENESA

9.1. Size:116K renesas
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Preliminary Datasheet RJQ6015DPM R07DS0848EJ0100 600V - 18A - IGBT and Diode Rev.1.00 Application Inverter Jul 27, 2012 Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 37 A, VGE = 15 V, Ta = 25 C) Built in fast recovery diode (100 ns typ.) in one package Trench gate and thin wafe

Otros transistores... IRGR2B60KD , STGF20H60DF , RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , IRG4PC50UD , RJQ6015DPM , RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D .