HGTD10N50F1 Todos los transistores

 

HGTD10N50F1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGTD10N50F1
   Tipo de transistor: IGBT
   Código de marcado: G10N50
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 75 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 12 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Qgⓘ - Carga total de la puerta, typ: 13.4 nC
   Paquete / Cubierta: TO251

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HGTD10N50F1 Datasheet (PDF)

 ..1. Size:40K  1
hgtd10n40f1 hgtd10n40f1s hgtd10n50f1 hgtd10n50f1s.pdf

HGTD10N50F1
HGTD10N50F1

HGTD10N40F1, HGTD10N40F1S,S E M I C O N D U C T O RHGTD10N50F1, HGTD10N50F1S10A, 400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTD10N40F1, HGTD10N50F1 10A, 400V and 500VJEDEC TO-251AA VCE(ON) 2.5V Max.EMITTER TFALL 1.4sCOLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceApplications

 7.1. Size:40K  harris semi
hgtd10n4.pdf

HGTD10N50F1
HGTD10N50F1

HGTD10N40F1, HGTD10N40F1S,S E M I C O N D U C T O RHGTD10N50F1, HGTD10N50F1S10A, 400V and 500V N-Channel IGBTsApril 1995Features PackagesHGTD10N40F1, HGTD10N50F1 10A, 400V and 500VJEDEC TO-251AA VCE(ON) 2.5V Max.EMITTER TFALL 1.4sCOLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR(FLANGE) High Input ImpedanceApplications

 9.1. Size:351K  1
hgtd1n120cns hgtp1n120cn.pdf

HGTD10N50F1
HGTD10N50F1

 9.2. Size:92K  fairchild semi
hgtd1n120bns hgtp1n120bn.pdf

HGTD10N50F1
HGTD10N50F1

HGTD1N120BNS, HGTP1N120BNData Sheet January 20015.3A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oCThrough (NPT) IGBT designs. They are new members of the 1200V Switching SOA CapabilityMOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150

 9.3. Size:217K  onsemi
hgtd1n120bns hgtp1n120bn.pdf

HGTD10N50F1
HGTD10N50F1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... HGT1S7N60C3DS , HGT1S7N60C3DS9A , HGT5A40N60A4D , HGT1Y40N60A4D , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , HGTD10N40F1S9A , GT30G124 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S , HGTD3N60B3 .

 

 
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