STGFW30H65FB Todos los transistores

 

STGFW30H65FB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGFW30H65FB
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 58 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 14.6 nS
   Coesⓘ - Capacitancia de salida, typ: 101 pF
   Paquete / Cubierta: TO3PF
 

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Principales características: STGFW30H65FB

 ..1. Size:432K  st
stgfw30h65fb stgw30h65fb.pdf pdf_icon

STGFW30H65FB

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 1 1 1 VCE(sat) = 1.55 V (typ.) at IC = 30 A 3 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applicati

 ..2. Size:1635K  st
stgfw30h65fb.pdf pdf_icon

STGFW30H65FB

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF Tight parameters distribution 1 1 1 Safe paralleling 3 Low t

 7.1. Size:1472K  st
stgfw30v60f.pdf pdf_icon

STGFW30H65FB

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App

 7.2. Size:1314K  st
stgfw30v60df.pdf pdf_icon

STGFW30H65FB

STGFW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 1 1 Tight parameters distribution 3 Safe paralleling 2 Low thermal resistance 1 Very fast soft recovery antiparallel diode TO-3P

Otros transistores... RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , FGL60N100BNTD , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 .

 

 
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