STGFW30H65FB Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGFW30H65FB  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 58 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 14.6 nS

Coesⓘ - Capacitancia de salida, typ: 101 pF

Encapsulados: TO3PF

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STGFW30H65FB datasheet

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 stgfw30h65fb stgw30h65fb.pdf pdf_icon

STGFW30H65FB

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 1 1 1 VCE(sat) = 1.55 V (typ.) at IC = 30 A 3 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applicati

 ..2. Size:1635K  st
 stgfw30h65fb.pdf pdf_icon

STGFW30H65FB

STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF Tight parameters distribution 1 1 1 Safe paralleling 3 Low t

 7.1. Size:1472K  st
 stgfw30v60f.pdf pdf_icon

STGFW30H65FB

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App

 7.2. Size:1314K  st
 stgfw30v60df.pdf pdf_icon

STGFW30H65FB

STGFW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 1 1 Tight parameters distribution 3 Safe paralleling 2 Low thermal resistance 1 Very fast soft recovery antiparallel diode TO-3P

MOSTRAR MÁS

Otros transistores... RJH60A83RDPE, RJH60V1BDPE, STGFW20V60DF, IRGB4059DPBF, IRGB4607D, IRGR4607D, IRGS4607D, STGFW20H65FB, GT30F133, STGFW30V60DF, STGFW30V60F, STGFW40H65FB, STGD6NC60H-1, STGFW40V60F, STGFW40V60DF, RJH60V2BDPE, IKP08N65F5