STGFW30H65FB Todos los transistores

 

STGFW30H65FB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGFW30H65FB
   Tipo de transistor: IGBT
   Código de marcado: GFW30H65FB
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 58 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 14.6 nS
   Coesⓘ - Capacitancia de salida, typ: 101 pF
   Qgⓘ - Carga total de la puerta, typ: 149 nC
   Paquete / Cubierta: TO3PF
     - Selección de transistores por parámetros

 

STGFW30H65FB Datasheet (PDF)

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stgfw30h65fb stgw30h65fb.pdf pdf_icon

STGFW30H65FB

STGFW30H65FB, STGW30H65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current111 VCE(sat) = 1.55 V (typ.) at IC = 30 A32 31 21 Tight parameters distributionTO-247TO-3PF Safe paralleling Low thermal resistanceApplicati

 ..2. Size:1635K  st
stgfw30h65fb.pdf pdf_icon

STGFW30H65FB

STGFW30H65FB, STGW30H65FB, STGWT30H65FBTrench gate field-stop IGBT, HB series 650 V, 30 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 30 ATO-3PF Tight parameters distribution111 Safe paralleling3 Low t

 7.1. Size:1472K  st
stgfw30v60f.pdf pdf_icon

STGFW30H65FB

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

 7.2. Size:1314K  st
stgfw30v60df.pdf pdf_icon

STGFW30H65FB

STGFW30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A111 Tight parameters distribution3 Safe paralleling2 Low thermal resistance1 Very fast soft recovery antiparallel diodeTO-3P

Otros transistores... RJH60A83RDPE , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , XNF15N60T , STGFW30V60DF , STGFW30V60F , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 .

History: IXGH35N120C

 

 
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