STGFW30V60F Todos los transistores

 

STGFW30V60F IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGFW30V60F

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 58 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO3PF

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STGFW30V60F datasheet

 ..1. Size:1472K  st
stgfw30v60f.pdf pdf_icon

STGFW30V60F

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App

 4.1. Size:1314K  st
stgfw30v60df.pdf pdf_icon

STGFW30V60F

STGFW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 1 1 Tight parameters distribution 3 Safe paralleling 2 Low thermal resistance 1 Very fast soft recovery antiparallel diode TO-3P

 7.1. Size:432K  st
stgfw30h65fb stgw30h65fb.pdf pdf_icon

STGFW30V60F

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 1 1 1 VCE(sat) = 1.55 V (typ.) at IC = 30 A 3 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applicati

 7.2. Size:751K  st
stgfw30nc60v.pdf pdf_icon

STGFW30V60F

STGFW30NC60V 30 A - 600 V - very fast IGBT Datasheet - production data Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 1 1 Applications 3 2 High frequency inverters 1 UPS, motor drivers TO3-PF HF, SMPS and PFC in both hard switch and resonant topologies Description

Otros transistores... STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB , STGFW30V60DF , CRG75T65AK5HD , STGFW40H65FB , STGD6NC60H-1 , STGFW40V60F , STGFW40V60DF , RJH60V2BDPE , IKP08N65F5 , IKP08N65H5 , IKD04N60RA .

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