IRGS4064D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGS4064D
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 101 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 49 pF
Paquete / Cubierta: TO263
Búsqueda de reemplazo de IRGS4064D - IGBT
IRGS4064D Datasheet (PDF)
irgs4064d.pdf
PD - 96424IRGS4064DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 10A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.6V 100% of The Parts Tested for (ILM) n-channel
auirgs4062d1.pdf
AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.
irgs4062d.pdf
PD - 97355BIRGS4062DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGSL4062DPbFULTRAFAST SOFT RECOVERY DIODEFeaturesCVCES = 600V Low VCE (ON) Trench IGBT Technology Low switching lossesIC = 24A, TC = 100C Maximum Junction temperature 175 C 5 S short circuit SOAG Square RBSOA tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated cur
irgs4045d.pdf
IRGS4045DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHVCES = 600VULTRAFAST SOFT RECOVERY DIODECCIC 6.0A, TC = 100Ctsc > 5s, Tjmax = 175CEGGD2-PakVCE(on) typ. 1.7V EIRGS4045DPbFn-channelApplicationsG C E Appliance Motor DriveGate Colletor Emitter Inverters SMPSFeatures BenefitsHigh efficiency in a wide range of applications and
irgs4056d.pdf
PD - 96197IRGS4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
irgs4086.pdf
PD - 96222IRGB4086PbFPDP TRENCH IGBTIRGS4086PbFKey ParametersFeaturesVCE min 300 Vl Advanced Trench IGBT TechnologyVCE(ON) typ. @ IC = 70Al Optimized for Sustain and Energy Recovery 1.90 VCircuits in PDP ApplicationsIRP max @ TC= 25C A250l Low VCE(on) and Energy per Pulse (EPULSETM)TJ max 150 Cfor Improved Panel Efficiencyl High Repetitive Peak Current Capabi
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