NGD18N45 Todos los transistores

 

NGD18N45 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD18N45

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 115 W

|Vce|ⓘ - Tensión máxima colector-emisor: 450 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 18 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 18 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.07 V @25℃

Coesⓘ - Capacitancia de salida, typ: 72 pF

Encapsulados: TO252

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NGD18N45 datasheet

 ..1. Size:132K  onsemi
ngd18n45.pdf pdf_icon

NGD18N45

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

 0.1. Size:132K  onsemi
ngd18n45clbt4g.pdf pdf_icon

NGD18N45

NGD18N45CLB Ignition IGBT 18 Amps, 450 Volts N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS high current switching is requ

 7.1. Size:126K  1
ngd18n40clb.pdf pdf_icon

NGD18N45

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

 7.2. Size:126K  onsemi
ngd18n40a.pdf pdf_icon

NGD18N45

NGD18N40CLB, NGD18N40ACLB Ignition IGBT, 18 A, 400 V N-Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped http //onsemi.com protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and 18 AMPS, 400 VOLTS high curren

Otros transistores... IKP15N65F5 , IKP15N65H5 , MMG15H120XB6TN , STGD3NC120H , RJP6016JPE , RJH60A85RDPE , RJH60V3BDPE , IRG7PH28UD1 , FGA60N65SMD , NGD18N45CLBT4G , NGD8201B , NGD8201BNT4G , STGB10H60DF , STGB15H60DF , STGP10H60DF , STGP15H60DF , IGP20N65F5 .

 

 

 


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