STGP10H60DF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGP10H60DF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 10 A
Tjⓘ -
Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
trⓘ - Tiempo de subida, typ: 6.9 nS
Coesⓘ - Capacitancia de salida, typ: 60 pF
Encapsulados: TO220AB
Búsqueda de reemplazo de STGP10H60DF IGBT
- Selección ⓘ de transistores por parámetros
STGP10H60DF datasheet
..1. Size:1722K st
stgp10h60df.pdf 
STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 Safe paralleling D PAK Low thermal resistance TAB Short-circuit rated Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 Motor cont
8.1. Size:288K st
stgp10nb60s.pdf
STGP10NB60S N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT TYPE VCES VCE(sat) IC STGP10NB60S 600 V
8.2. Size:607K st
stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM
8.3. Size:326K st
stgp10nc60h.pdf
STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT Features VCE(sat) IC VCES Type (Max)@ 25 C @100 C STGP10NC60H 600V
8.4. Size:767K st
stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant
8.6. Size:608K st
stgb10nc60k stgp10nc60k stgd10nc60k.pdf
STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25 C @100 C STGB10NC60K 600V
8.7. Size:781K st
stgp10m65df2.pdf
STGP10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220 package Datasheet - production data Features 6 s of short-circuit withstand time V = 1.55 V (typ.) @ I = 10 A CE(sat) C TAB Tight parameter distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance 3 Soft and very fast
8.8. Size:1260K st
stgp10nc60s.pdf
STGD10NC60S STGP10NC60S 10 A, 600 V fast IGBT Features Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB Low on-voltage drop (VCE(sat)) TAB Application 3 3 2 1 1 Motor drive DPAK TO-220 Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low
8.9. Size:1653K st
stgb10nc60kdt4 stgd10nc60kdt4 stgf10nc60kd stgp10nc60kd.pdf
STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (V ) CE(sat) Lower C / C ratio (no cross-conduction RES IES susceptibility) Very soft ultra fast recovery antiparallel diode Short-circuit withstand time 10 s Applications High frequency motor
8.10. Size:252K st
stgd10nc60s stgp10nc60s.pdf
STGD10NC60S STGP10NC60S 10 A - 600 V fast IGBT Features Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies 3 3 2 1 1 Application DPAK TO-220 Medium frequency motor control Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-of
8.11. Size:316K st
stgp10nb60sfp.pdf
STGP10NB60SFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT TYPE VCES VCE(sat) IC STGP10NB60SFP 600
8.12. Size:426K st
stgf10nb60sd stgp10nb60sd.pdf
STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diode Applications 3 3 2 2 1 1 Light dimmer Static relays TO-220FP TO-220 Motor drive Description This IGBT utilizes the advanced Power MESH Figure 1.
8.13. Size:427K st
stgp10nb60sd.pdf
STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features Low on-voltage drop (VCE(sat)) High current capability TAB Very soft ultra fast recovery antiparallel diode Applications 3 3 2 2 1 1 Light dimmer Static relays TO-220FP TO-220 Motor drive Description This IGBT utilizes the advanced Power MESH Figure 1.
8.14. Size:747K st
stgb10nb37lz stgp10nb37lz.pdf
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
8.15. Size:433K st
stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf
STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D PAK PowerMESH IGBT Table 1 General Features Figure 1 Package TYPE VCES VCE(sat) (Max) IC @25 C @100 C STGP10NB60S 600 V
8.16. Size:605K st
stgp10nc60kd.pdf
STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10 s Description This IGBT utilizes the advanced PowerM
8.17. Size:747K st
stgp10nb37lz.pdf
STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off
8.18. Size:768K st
stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf
STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant
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History: NGD18N45
