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STGP10H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGP10H60DF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 115

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 10

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 6.9

Capacitancia de salida (Cc), pF: 60

Empaquetado / Estuche: TO220AB

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STGP10H60DF Datasheet (PDF)

1.1. stgp10h60df.pdf Size:1722K _igbt

STGP10H60DF
STGP10H60DF

STGB10H60DF, STGF10H60DF, STGP10H60DF Trench gate field-stop IGBT, H series 600 V, 10 A high speed Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 1 • Safe paralleling D²PAK • Low thermal resistance TAB • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications 3 3 2 2 1 1 • Motor cont

4.1. stgp10nb60s stgp10nb60sfp stgb10nb60s.pdf Size:433K _st

STGP10H60DF
STGP10H60DF

STGP10NB60S STGP10NB60SFP- STGB10NB60S N-CHANNEL 10A - 600V - TO-220/TO-220FP/D?PAK PowerMESH IGBT Table 1: General Features Figure 1: Package TYPE VCES VCE(sat) (Max) IC @25C @100C STGP10NB60S 600 V < 1.7 V 10 A STGP10NB60SFP 600 V < 1.7 V 10 A STGB10NB60S 600 V < 1.7 V 10 A 3 3 2 2 1 1 HIGHT INPUT IMPEDANCE (VOLTAGE TO-220FP TO-220 DRIVEN) VERY LOW ON-VOLTAGE DROP( Vcesat

4.2. stgb10nc60k stgp10nc60k stgd10nc60k.pdf Size:608K _st

STGP10H60DF
STGP10H60DF

STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH IGBT General features IC VCE(sat)Max Type VCES @25C @100C STGB10NC60K 600V <2.5V 10A 3 STGP10NC60K 600V <2.5V 10A 1 3 2 STGD10NC60K 600v <2.5V 10A 1 D?PAK TO-220 Lower on voltage drop (Vcesat) 3 Lower CRES / CIES ratio (no cross-conduction 1 susceptibility)

4.3. stgb10nc60kd stgd10nc60kd stgf10nc60kd stgp10nc60kd.pdf Size:607K _st

STGP10H60DF
STGP10H60DF

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB Lower on voltage drop (VCE(sat)) 3 Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK Very soft ultra fast recovery antiparallel diode D2PAK TAB Short-circuit withstand time 10s Description This IGBT utilizes the advanced PowerMESH 3 3 2

4.4. stgb10nb37lz stgp10nb37lz.pdf Size:749K _st

STGP10H60DF
STGP10H60DF

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features Low threshold voltage Low on-voltage drop TAB TAB Low gate charge High current capability 3 High voltage clamping feature 3 1 2 1 TO-220 D?PAK Applications Automotive ignition Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal

4.5. stgf100n30 stgp100n30 stgw100n30.pdf Size:693K _st

STGP10H60DF
STGP10H60DF

STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features Optimized for sustain and energy recovery circuits in PDP applications. State-of-the-art STripFET technology 3 3 2 2 1 Peak collector current IRP = 330 A @ 1 TC = 25 C (see Table 2) TO-220FP TO-247 Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency High repetitiv

4.6. stgp10nb60sd.pdf Size:249K _st

STGP10H60DF
STGP10H60DF

STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features VCE(sat) IC VCES Type (Max)@ 25C @100C STGP10NB60SD 600V < 1.7V 10A HIGH CURRENT CAPABILITY 3 HIGH INPUT IMPEDANCE (VOLTAGE 2 1 DRIVEN) TO-220 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has Internal schematic diagram design

4.7. stgb10nc60hd stgd10nc60hd stgf10nc60hd stgp10nc60hd.pdf Size:768K _st

STGP10H60DF
STGP10H60DF

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 Low on-voltage drop (VCE(sat)) 3 Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D?PAK DPAK Very soft ultra fast recovery antiparallel diode Applications High frequency motor controls 3 3 2 2 SMPS and PFC in both hard switch and 1 1 resonant topologies TO

4.8. stgp10nb60sfp.pdf Size:316K _st

STGP10H60DF
STGP10H60DF

STGP10NB60SFP N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT TYPE VCES VCE(sat) IC STGP10NB60SFP 600 < 1.7 V 10 A HIGHT INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP 3 HIGH CURRENT CAPABILITY 2 1 OFF LOSSES INCLUDE TAIL CURRENT TO-220FP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has INTERNAL SCHEMATIC DI

4.9. stgp10nb37lz.pdf Size:267K _st

STGP10H60DF
STGP10H60DF

STGP10NB37LZ N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT TYPE VCES VCE(sat) IC STGP10NB37LZ CLAMPED < 1.8 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE 3 HIGH CURRENT CAPABILITY 2 HIGH VOLTAGE CLAMPING FEATURE 1 TO-220 DESCRIPTION Using the latest high voltage technology based on a INTERNAL SCHEMATIC D

4.10. stgp10nb60s.pdf Size:288K _st

STGP10H60DF
STGP10H60DF

STGP10NB60S N-CHANNEL 10A - 600V TO-220 PowerMESH? IGBT TYPE VCES VCE(sat) IC STGP10NB60S 600 V < 1.7 V 10 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (V ) cesat HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT 3 DESCRIPTION 2 Using the latest high voltage technology based 1 on a patented strip layout, STMicroelectronics has designed an advanced

4.11. stgp10nc60h.pdf Size:326K _st

STGP10H60DF
STGP10H60DF

STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT Features VCE(sat) IC VCES Type (Max)@ 25C @100C STGP10NC60H 600V < 2.5V 10A Low on-voltage drop (Vcesat) Low CRES / CIES ratio (no cross-conduction 3 2 susceptibility) 1 TO-220 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an adva

4.12. stgd10nc60s stgp10nc60s.pdf Size:252K _st

STGP10H60DF
STGP10H60DF

STGD10NC60S STGP10NC60S 10 A - 600 V fast IGBT Features Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz in hard switching Optimized performance for medium operating frequencies 3 3 2 1 1 Application DPAK TO-220 Medium frequency motor control Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off between s

4.13. stgp10nb60sd.pdf Size:427K _igbt

STGP10H60DF
STGP10H60DF

STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability TAB ■ Very soft ultra fast recovery antiparallel diode Applications 3 3 2 2 1 1 ■ Light dimmer ■ Static relays TO-220FP TO-220 ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ Figure 1.

4.14. stgp10nc60s.pdf Size:1260K _igbt

STGP10H60DF
STGP10H60DF

STGD10NC60S STGP10NC60S 10 A, 600 V fast IGBT Features ■ Optimized performance for medium operating frequencies up to 5 kHz in hard switching TAB ■ Low on-voltage drop (VCE(sat)) TAB Application 3 3 2 1 1 ■ Motor drive DPAK TO-220 Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low

4.15. stgp10nc60hd.pdf Size:767K _igbt

STGP10H60DF
STGP10H60DF

STGB10NC60HD - STGD10NC60HD STGF10NC60HD - STGP10NC60HD 600 V - 10 A - very fast IGBT Features 2 ■ Low on-voltage drop (VCE(sat)) 3 ■ Low CRES / CIES ratio (no cross-conduction 3 1 1 susceptibility) D²PAK DPAK ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency motor controls 3 3 2 2 ■ SMPS and PFC in both hard switch and 1 1 resonant

4.16. stgp10nb37lz.pdf Size:747K _igbt

STGP10H60DF
STGP10H60DF

STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features ■ Low threshold voltage ■ Low on-voltage drop TAB TAB ■ Low gate charge ■ High current capability 3 ■ High voltage clamping feature 3 1 2 1 TO-220 D²PAK Applications ■ Automotive ignition Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off

4.17. stgp10nc60kd.pdf Size:605K _igbt

STGP10H60DF
STGP10H60DF

STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features TAB TAB ■ Lower on voltage drop (VCE(sat)) 3 ■ Lower CRES / CIES ratio (no cross-conduction 1 3 1 susceptibility) DPAK ■ Very soft ultra fast recovery antiparallel diode D2PAK TAB ■ Short-circuit withstand time 10µs Description This IGBT utilizes the advanced PowerM

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