IRGB4620D Todos los transistores

 

IRGB4620D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGB4620D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 140 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 32 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 17 nS

Coesⓘ - Capacitancia de salida, typ: 52 pF

Encapsulados: TO220AB

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IRGB4620D datasheet

 ..1. Size:901K  international rectifier
irgb4620d.pdf pdf_icon

IRGB4620D

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100 C E E E E C G C C C G tSC 5 s, TJ(max) = 175 C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

 0.1. Size:966K  infineon
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf pdf_icon

IRGB4620D

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

 8.1. Size:809K  international rectifier
irgb4640d.pdf pdf_icon

IRGB4620D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

 8.2. Size:428K  international rectifier
irgb4610d.pdf pdf_icon

IRGB4620D

IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C C IC = 10A, TC = 100 C E E E C G G G G tsc > 5 s, Tjmax = 175 C D-Pak E D2-Pak TO-220AB VCE(on) typ. = 1.7V @ 6A IRGR4610DPbF IRGS4610DPbF IRGB4610DPbF n-channel GCE Applications Gate Collector Emitter Appliance Drives Inverters

Otros transistores... IKP20N65H5 , IRG4MC40U , IRG8P15N120KD , OM6516SC , OM6517SA , OM6520SC , STGD19N40LZ , KGF15N120NDS , YGW60N65F1A1 , IRGP4620D , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF .

History: IRGP4620D | OM6517SA

 

 

 


History: IRGP4620D | OM6517SA

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