STGP30H60DF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STGB30H60DF STGP30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - preliminary dataFeatures High speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time 3 3211 Ultrafast soft recovery antiparallel diodeTO-220Applications DPAK Motor controlDescriptionFig

STGB30H60DF, STGF30H60DF,STGP30H60DF, STGW30H60DF600 V, 30 A high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTAB High speed switching Tight parameters distribution313 Safe paralleling21DPAK Low thermal resistanceTO-220FP Short circuit ratedTAB Ultrafast soft recovery antiparallel diodeApplications3 3 I

STGB30H60DFB, STGP30H60DFBDatasheetTrench gate field-stop 600 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 CTABTAB High speed switching series Minimized tail current3 Low saturation voltage: VCE(sat) = 1.55 V (typ.) @ IC = 30 A132D PAK TO-220 2 Tight parameter distribution1 Safe paralleling Positive V

STGP30H65FTrench gate field-stop IGBT, H series 650 V, 30 A high speedDatasheet - production dataFeatures High speed switching Tight parameters distributionTAB Safe paralleling Low thermal resistance Short-circuit rated321ApplicationsTO-220 Inverter UPS PFCDescriptionFigure 1. Internal schematic diagramThis device is an IGBT deve

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESHTM process result

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

STGB30NC60KSTGP30NC60K30 A - 600 V - short circuit rugged IGBTFeatures Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s3 32Applications 11DPAKTO-220 High frequency inverters Motor driversDescriptionThis IGBT utilizes the advanced PowerMESH process resulting in an

STGF30NC60SSTGP30NC60S, STGWF30NC60S30 A, 600 V, fast IGBTFeaturesTAB Optimized performance for medium operating frequencies up to 5 kHz in hard switching Low on-voltage drop (VCE(sat))332 High current capability 211TO-220 TO-220FPApplication1113Motor drive21TO-3PFDescriptionThis device utilizes the advanced PowerMESH process resul

STGP30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220 package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) CTAB Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode 321Appl

STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataTABFeaturesTAB Maximum junction temperature: TJ = 175 C Tail-less switching off3 321 VCE(sat) = 1.85 V (typ.) @ IC = 30 A1DPAK TO-220 Tight parameters distributionTAB Safe paralleling Low therma

STGB30V60F, STGP30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 CTAB Tail-less switching offTAB VCE(sat) = 1.85 V (typ.) @ IC = 30 A Tight parameters distribution Safe paralleling33121 Low thermal resistanceD2PAKTO-220Applications Ph