IKD10N60RA Todos los transistores

 

IKD10N60RA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKD10N60RA

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Coesⓘ - Capacitancia de salida, typ: 37 pF

Encapsulados: TO252

 Búsqueda de reemplazo de IKD10N60RA IGBT

- Selección ⓘ de transistores por parámetros

 

IKD10N60RA datasheet

 ..1. Size:2126K  infineon
ikd10n60ra.pdf pdf_icon

IKD10N60RA

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60RA 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD10N60RA TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 6

 5.1. Size:1927K  infineon
ikd10n60rf.pdf pdf_icon

IKD10N60RA

 5.2. Size:1816K  infineon
ikd10n60r.pdf pdf_icon

IKD10N60RA

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Data sheet Industrial Power Control IKD10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (RC) technology for 600

 5.3. Size:1850K  infineon
ikd10n60r iku10n60r.pdf pdf_icon

IKD10N60RA

IGBT IGBT with integrated diode in packages offering space saving advantage IKD10N60R, IKU10N60R 600V TRENCHSTOPTM RC-Series for hard switching applications Datasheet Industrial & Multimarket IKD10N60R, IKU10N60R TRENCHSTOPTM RC-Series for hard switching applications IGBT with integrated diode in packages offering space saving advantage C Features TRENCHSTOPTM Reverse Conducting (R

Otros transistores... IRGP4620D , IRGS4620D , MMG25H120X6TN , MMG25H120XB6TN , KGT15N135KDH , KGT15N135NDH , STGB30H60DF , STGP30H60DF , JT075N065WED , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , NGTB15N120IHL .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

2sc1124 | 2n408 | 2sc2690 | d718 datasheet | mp38 transistor | 2sc2389 | b331 transistor | 2sa720

 

 

↑ Back to Top
.