KGF20N60KDA IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGF20N60KDA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Encapsulados: TO247
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KGF20N60KDA datasheet
kgf20n60kda.pdf
SEMICONDUCTOR KGF20N60KDA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand T
kgf20n60pa.pdf
SEMICONDUCTOR KGF20N60PA TECHNICAL DATA General Description KEC Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High ruggedness, temperature stable behavior Short Circuit Withstand Ti
Otros transistores... STGB30H60DF , STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , IRG4PC50U , KGF20N60PA , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG .
History: MMG25H120X6TN
History: MMG25H120X6TN
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