KGF20N60PA - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGF20N60PA
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 20 nS
Coesⓘ - Capacitancia de salida, typ: 100 pF
Qgⓘ - Carga total de la puerta, typ: 100 nC
Paquete / Cubierta: TO220AB
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KGF20N60PA Datasheet (PDF)
kgf20n60pa.pdf
SEMICONDUCTORKGF20N60PATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand Ti
kgf20n60kda.pdf
SEMICONDUCTORKGF20N60KDATECHNICAL DATAGeneral DescriptionKEC Field Stop Trench IGBTs offer low switching losses, high energy efficiencyand short circuit ruggedness.It is designed for applications such as motor control, uninterrupted powersupplies(UPS), general inverters.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorShort Circuit Withstand T
Otros transistores... STGP30H60DF , IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , IRGP4066D , NGTB15N120IHL , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2