NGTB15N120IHL Todos los transistores

 

NGTB15N120IHL IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB15N120IHL

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 156 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

Coesⓘ - Capacitancia de salida, typ: 88 pF

Encapsulados: TO247

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NGTB15N120IHL datasheet

 ..1. Size:172K  onsemi
 ngtb15n120ihl.pdf pdf_icon

NGTB15N120IHL

NGTB15N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:124K  onsemi
 ngtb15n120ih.pdf pdf_icon

NGTB15N120IHL

NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching applications. 15 A, 1200

 2.2. Size:175K  onsemi
 ngtb15n120ihr.pdf pdf_icon

NGTB15N120IHL

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 2.3. Size:175K  onsemi
 ngtb15n120ihrwg.pdf pdf_icon

NGTB15N120IHL

NGTB15N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

MOSTRAR MÁS

Otros transistores... IKD10N60RA , IHW20N65R5 , IRG4MC50F , SGTN15C120HW , STGB18N40LZT4 , STGP30H65F , KGF20N60KDA , KGF20N60PA , GT30F131 , NGTB15N120FL , NGTB15N120FLWG , NGTB15N120L , NGTB15N120LWG , NGTB20N120IHS , NGTB20N120IHSWG , AUIRG4PC40S-E , KGF15N120KDA .

History: TGAN30S135FD | RJP60F5DPK | TGAF40N60F2D | VS-GB150LH120N | SRE100N065FSUD6 | TGAN60N65F2DR | SRE50N120FSUDAT

 

 

 

 

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