KGT15N120NDS Todos los transistores

 

KGT15N120NDS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KGT15N120NDS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 176 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.98 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 50 pF

Encapsulados: TO3P

 Búsqueda de reemplazo de KGT15N120NDS IGBT

- Selección ⓘ de transistores por parámetros

 

KGT15N120NDS datasheet

 ..1. Size:1466K  kec
kgt15n120nds.pdf pdf_icon

KGT15N120NDS

SEMICONDUCTOR KGT15N120NDS TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

 3.1. Size:100K  kec
kgt15n120nda.pdf pdf_icon

KGT15N120NDS

SEMICONDUCTOR KGT15N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 + FEATURES _ d + 1.00 0.20 High spee

 3.2. Size:1475K  kec
kgt15n120ndh.pdf pdf_icon

KGT15N120NDS

SEMICONDUCTOR KGT15N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

 5.1. Size:1565K  kec
kgt15n120kda.pdf pdf_icon

KGT15N120NDS

SEMICONDUCTOR KGT15N120KDA TECHNICAL DATA General Description KEC NPT Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. FEATURES High speed switching High system efficiency Short Circuit Withstand Times 10us Extremely en

Otros transistores... STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F , F3L50R06W1E3_B11 , TGD30N40P , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , IRG7PH35UD1M , IRG8P25N120KD , IGB30N60T , IGW30N60T , IGP30N65F5 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a

 

 

↑ Back to Top
.