IRG7PH35UD1M Todos los transistores

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IRG7PH35UD1M - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG7PH35UD1M

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 179

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 1.9

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 50

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF: 120

Empaquetado / Estuche: TO247

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IRG7PH35UD1M Datasheet (PDF)

1.1. irg7ph35u.pdf Size:374K _igbt_a

IRG7PH35UD1M
IRG7PH35UD1M

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

1.2. irg7ph35ud1m.pdf Size:300K _igbt_a

IRG7PH35UD1M
IRG7PH35UD1M

IRG7PH35UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C • Low VCE (ON) trench IGBT Technology VCES = 1200V • Low Switching Losses • Square RBSOA IC = 25A, TC = 100°C • Ultra-Low VF Diode • 1300Vpk Repetitive Transient Capacity G TJ(max) = 150°C • 100% of the Parts Tested for ILM •

1.3. irg7ph35u-ep.pdf Size:374K _igbt_a

IRG7PH35UD1M
IRG7PH35UD1M

PD - 97479 IRG7PH35UPbF INSULATED GATE BIPOLAR TRANSISTOR IRG7PH35U-EP Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Maximum junction temperature 175 °C I NOMINAL = 20A • Square RBSOA • 100% of the parts tested for ILM G TJ(max) = 175°C • Positive VCE (ON) temperature co-efficient • Tight parameter distribution E VCE(on)

1.4. irg7ph35ud1.pdf Size:326K _igbt_a

IRG7PH35UD1M
IRG7PH35UD1M

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

1.5. irg7ph35ud.pdf Size:461K _igbt_a

IRG7PH35UD1M
IRG7PH35UD1M

PD-96288 IRG7PH35UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRG7PH35UD-EP ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) trench IGBT technology VCES = 1200V • Low switching losses • Square RBSOA I NOMINAL = 20A • 100% of the parts tested for ILM • Positive VCE (ON) temperature co-efficient G TJ(max) = 150°C • Ultra fast soft recovery co-pak diode • T

1.6. irg7ph35ud1-ep.pdf Size:326K _igbt_a

IRG7PH35UD1M
IRG7PH35UD1M

IRG7PH35UD1PbF IRG7PH35UD1-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features C VCES = 1200V • Low VCE (ON) trench IGBT Technology • Low Switching Losses I NOMINAL = 20A • Square RBSOA • Ultra-Low VF Diode G TJ(max) = 150°C • 1300Vpk Repetitive Transient Capacity • 100% of the Parts Tested for I

Otros transistores... STGW20V60F , STGWT20V60DF , STGWT20V60F , F3L50R06W1E3_B11 , KGT15N120NDS , KGF30N60KDA , KGF30N60PA , IRG7PH35UD1-EP , RJP63K2DPK-M0 , IRG8P25N120KD , IGB30N60T , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 .

 


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