NGTB30N60SWG IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGTB30N60SWG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 189 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 32 nS
Coesⓘ - Capacitancia de salida, typ: 70 pF
Encapsulados: TO247
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NGTB30N60SWG datasheet
ngtb30n60swg.pdf
NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack
ngtb30n60s.pdf
NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-pack
ngtb30n60flwg.pdf
NGTB30N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. http //onsemi.com Features Low Saturation Voltage using Trench with Field Stop Technology 30 A, 600 V Low Switching Loss R
ngtb30n60ihlwg.pdf
NGTB30N60IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the http //onsemi.com device is a
Otros transistores... IGB30N60T , IGW30N60T , IGP30N65F5 , IGP30N65H5 , IKP30N65F5 , IKP30N65H5 , IKW30N65H5 , NGTB30N60S , IRGP4062D , NGTB20N120IHL , NGTB25N120IHL , IRGP6630D , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS .
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