NGTB30N120IHSWG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGTB30N120IHSWG  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 192 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

Coesⓘ - Capacitancia de salida, typ: 125 pF

Encapsulados: TO247

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NGTB30N120IHSWG datasheet

 0.1. Size:172K  onsemi
 ngtb30n120ihswg.pdf pdf_icon

NGTB30N120IHSWG

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 1.1. Size:172K  onsemi
 ngtb30n120ihs.pdf pdf_icon

NGTB30N120IHSWG

NGTB30N120IHSWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated http //onsemi.com into the devic

 2.1. Size:180K  onsemi
 ngtb30n120ihr.pdf pdf_icon

NGTB30N120IHSWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

 2.2. Size:180K  onsemi
 ngtb30n120ihrwg.pdf pdf_icon

NGTB30N120IHSWG

NGTB30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is http //onsemi.com well suited for resonant or soft switching appli

MOSTRAR MÁS

Otros transistores... NGTB20N120IHL, NGTB25N120IHL, IRGP6630D, NGTB20N120L, NGTB20N120LWG, NGTB25N120L, NGTB25N120LWG, NGTB30N120IHS, MBQ60T65PES, 25MT060WFAPBF, MMG40H120XB6TN, 6SI75N12, IRGB4630D, IRGP4630D, IRGS4630D, CI40T120P, KGF25N120KDA