MMG40H120XB6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG40H120XB6TN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 195
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 30
Carga total de la puerta (Qg), typ, nC: 0.33
Paquete / Cubierta: MODULE
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MMG40H120XB6TN Datasheet (PDF)
mmg40h120xb6tn.pdf
MMG40H120XB6TN1200V 40A PIM ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base
mmg40h120xb6tc.pdf
MMG40H120XB6TC1200V 40A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base
mmg40h120xt6tc.pdf
MMG40H120XT6TC1200V 40A Rectifier+Inverter ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulat
mmg40hb120h6hn.pdf
MMG40HB120H6HN1200V 40A Four-Pack ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching
Otros transistores... IRGP6630D , NGTB20N120L , NGTB20N120LWG , NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , FGH40N60SFD , 6SI75N12 , IRGB4630D , IRGP4630D , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ