IRGP4630D Todos los transistores

 

IRGP4630D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4630D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 206 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 47 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 87 pF

Encapsulados: TO247

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IRGP4630D datasheet

 ..1. Size:1268K  international rectifier
irgp4630d.pdf pdf_icon

IRGP4630D

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 30A, TC =100 C E E E G E C tSC 5 s, TJ(max) = 175 C C C C G G G G E IRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

 0.1. Size:1323K  infineon
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf pdf_icon

IRGP4630D

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100 C tSC 5 s, TJ(max) = 175 C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB C C Applications Indust

 8.1. Size:347K  international rectifier
irgp4650d.pdf pdf_icon

IRGP4630D

IRGP4650DPbF IRGP4650D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C C C IC = 50A, TC = 100 C tSC 5 s, TJ(max) = 175 C G E E C C G G VCE(on) typ. = 1.60V @ IC = 35A E TO-247AC TO-247AD n-channel IRGP4650DPbF IRGP4650D-EP Applications GC E Industrial Motor Drive Gate Collector Emitter Inverters UPS Weldi

 8.2. Size:154K  international rectifier
irgp460lc.pdf pdf_icon

IRGP4630D

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

Otros transistores... NGTB25N120L , NGTB25N120LWG , NGTB30N120IHS , NGTB30N120IHSWG , 25MT060WFAPBF , MMG40H120XB6TN , 6SI75N12 , IRGB4630D , FGPF4536 , IRGS4630D , CI40T120P , KGF25N120KDA , AP40G120W , F4-25R12NS4 , IRG7PG35U , STGB20H60DF , STGP20H60DF .

 

 

 


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