IKW30N65EL5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N65EL5
Tipo de transistor: IGBT + Diode
Código de marcado: K30EEL5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 227 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 64 pF
Qgⓘ - Carga total de la puerta, typ: 168 nC
Paquete / Cubierta: TO247
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IKW30N65EL5 Datasheet (PDF)
ikw30n65el5.pdf

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Otros transistores... KGT25N135KDH , STGWA30N120KD , KGF40N60PA , NGTB50N60FLWG , NGTB50N60FWG , NGTG50N60FLWG , NGTG50N60FWG , KGF50N60KDA , IRG7R313U , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN .



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