IKW30N65EL5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW30N65EL5  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 227 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.05 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Coesⓘ - Capacitancia de salida, typ: 64 pF

Encapsulados: TO247

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IKW30N65EL5 datasheet

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IKW30N65EL5

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IGBT Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 CE(sat) fast and soft antiparallel diode IKW30N65NL5 650V DuoPack IGBT and diode Low V series fifth generation CE(sat) Data sheet Industrial Power Control IKW30N65NL5 Low V series fifth generation CE(sat) Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2 CE(sat) fast and soft antiparallel diode C Fe

MOSTRAR MÁS

Otros transistores... KGT25N135KDH, STGWA30N120KD, KGF40N60PA, NGTB50N60FLWG, NGTB50N60FWG, NGTG50N60FLWG, NGTG50N60FWG, KGF50N60KDA, IRG7R313U, IKW30N65NL5, IHW40N65R5, IKW40N65WR5, NGTB25N120FL, NGTB25N120FLWG, 20MT120UFAPBF, 20MT120UFP, MMG40HB120H6HN