MMG40HB120H6HN Todos los transistores

 

MMG40HB120H6HN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG40HB120H6HN
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 240 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 35 nS
   Qgⓘ - Carga total de la puerta, typ: 180 nC
   Paquete / Cubierta: MODULE
 

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MMG40HB120H6HN Datasheet (PDF)

 ..1. Size:227K  macmic
mmg40hb120h6hn.pdf pdf_icon

MMG40HB120H6HN

MMG40HB120H6HN1200V 40A Four-Pack ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching

 8.1. Size:1012K  macmic
mmg40h120xt6tc.pdf pdf_icon

MMG40HB120H6HN

MMG40H120XT6TC1200V 40A Rectifier+Inverter ModuleJune 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulat

 8.2. Size:257K  macmic
mmg40h120xb6tc.pdf pdf_icon

MMG40HB120H6HN

MMG40H120XB6TC1200V 40A PIM ModuleAugust 2018 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 8.3. Size:267K  macmic
mmg40h120xb6tn.pdf pdf_icon

MMG40HB120H6HN

MMG40H120XB6TN1200V 40A PIM ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

Otros transistores... IKW30N65EL5 , IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , SGT60N60FD1P7 , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH , KGT30N135NDH .

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