STGWA40N120KD Todos los transistores

 

STGWA40N120KD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA40N120KD
   Tipo de transistor: IGBT + Diode
   Código de marcado: GWA40N120KD
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 240 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 125 ℃
   trⓘ - Tiempo de subida, typ: 40 nS
   Coesⓘ - Capacitancia de salida, typ: 196 pF
   Qgⓘ - Carga total de la puerta, typ: 126 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

STGWA40N120KD Datasheet (PDF)

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stgwa40n120kd.pdf pdf_icon

STGWA40N120KD

STGW40N120KDSTGWA40N120KD40 A, 1200 V short circuit rugged IGBT with Ultrafast diodeFeatures Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3diode21ApplicationsTO-247 Motor controlDescriptionFigure 1. Internal schematic diagramThis high voltage and short

 7.1. Size:526K  st
stgwa40h65dfb.pdf pdf_icon

STGWA40N120KD

STGWA40H65DFBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution Safe paralleling Positive VCE(sat) temperature coefficient Low thermal resist

 7.2. Size:431K  st
stgfw40h65fb stgw40h65fb stgwa40h65fb.pdf pdf_icon

STGWA40N120KD

STGFW40H65FB, STGW40H65FB, STGWA40H65FBDatasheetTrench gate field-stop 650 V, 40 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C323 12 High speed switching series1TO-3PF TO-247 Minimized tail current Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A Safe paralleling321 Tight parameter distributio

 7.3. Size:699K  st
stgwa40h120df2.pdf pdf_icon

STGWA40N120KD

STGW40H120DF2,STGWA40H120DF2Trench gate field-stop IGBT, H series 1200 V, 40 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 40 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247TO

Otros transistores... IKW30N65NL5 , IHW40N65R5 , IKW40N65WR5 , NGTB25N120FL , NGTB25N120FLWG , 20MT120UFAPBF , 20MT120UFP , MMG40HB120H6HN , CRG15T120BNR3S , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH , KGT30N135NDH , IKD15N60RA .

 

 
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