AUIRGSL4062D1 Todos los transistores

 

AUIRGSL4062D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AUIRGSL4062D1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 246 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 59 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.77 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 24 nS
   Coesⓘ - Capacitancia de salida, typ: 118 pF
   Qgⓘ - Carga total de la puerta, typ: 51 nC
   Paquete / Cubierta: TO262
 

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AUIRGSL4062D1 Datasheet (PDF)

 ..1. Size:415K  international rectifier
 auirgsl4062d1.pdf pdf_icon

AUIRGSL4062D1

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

 7.1. Size:305K  international rectifier
 auirgsl30b60k.pdf pdf_icon

AUIRGSL4062D1

PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.

 8.1. Size:305K  international rectifier
 auirgs30b60k.pdf pdf_icon

AUIRGSL4062D1

PD - 96334AUTOMOTIVE GRADEAUIRGS30B60KAUIRGSL30B60KINSULATED GATE BIPOLAR TRANSISTORCVCES = 600VFeatures Low VCE(on) Non Punch Through IGBT TechnologyIC = 50A, TC=100C 10s Short Circuit Capabilityat TJ=175C Square RBSOA Gtsc > 10s, TJ=150C Positive VCE(on) Temperature CoefficientE Maximum Junction Temperature rated at 175CVCE(on) typ.

 8.2. Size:415K  international rectifier
 auirgs4062d1.pdf pdf_icon

AUIRGSL4062D1

AUIRGB4062D1AUIRGS4062D1AUTOMOTIVE GRADEAUIRGSL4062D1INSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeatures Low VCE (on) Trench IGBT Technology IC(Nominal) = 24A Low Switching Losses 5s SCSOAGtSC 5s, TJ(max) = 175C Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: 1MBI1600U4C-170 | KM435V | IRG4BC20F | BT15T60A9F | IHW40N120R5

 

 
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