KGT30N135NDH Todos los transistores

 

KGT30N135NDH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KGT30N135NDH

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 120 pF

Encapsulados: TO3P

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KGT30N135NDH datasheet

 ..1. Size:1596K  kec
kgt30n135ndh.pdf pdf_icon

KGT30N135NDH

SEMICONDUCTOR KGT30N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

 5.1. Size:514K  kec
kgt30n135kdh.pdf pdf_icon

KGT30N135NDH

SEMICONDUCTOR KGT30N135KDH TECHNICAL DATA General Description B KEC NPT IGBTs offer low switching losses, high energy efficiency A O S K and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. DIM MILLIMETERS _ + A 15.90 0.30 FEATURES _ B 5.00 + 0.20 High speed switching _ C 20.85 + 0.30 _ D 3.00 + 0.20 High r

 7.1. Size:584K  kec
kgt30n120ndh.pdf pdf_icon

KGT30N135NDH

SEMICONDUCTOR KGT30N120NDH TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed

 7.2. Size:584K  kec
kgt30n120nda.pdf pdf_icon

KGT30N135NDH

SEMICONDUCTOR KGT30N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS general inverters, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed switching _ E 3.

Otros transistores... MMG40HB120H6HN , STGWA40N120KD , RJH1CV5DPK , AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH , JT075N065WED , IKD15N60RA , IGW40N65F5A , IGW40N65H5A , IKW40N65F5A , IKW40N65H5A , IRGB4640D , IRGP4062-E , IRGP4262D .

History: AUIRGSL4062D1

 

 

 


History: AUIRGSL4062D1

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