KGT30N135NDH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KGT30N135NDH
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1350 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Paquete / Cubierta: TO3P
- Selección de transistores por parámetros
KGT30N135NDH Datasheet (PDF)
kgt30n135ndh.pdf

SEMICONDUCTORKGT30N135NDHTECHNICAL DATAGeneral DescriptionKEC NPT IGBTs offer low switching losses, high energy efficiencyand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.FEATURES High speed switchingHigh ruggedness, temperature stable behaviorSoft current turn-off waveformsExtremely enhanced avalanche c
kgt30n135kdh.pdf

SEMICONDUCTORKGT30N135KDHTECHNICAL DATAGeneral DescriptionBKEC NPT IGBTs offer low switching losses, high energy efficiency AOS Kand high avalanche ruggedness for soft switching application such asIH(induction heating), microwave oven, etc.DIM MILLIMETERS_+A 15.90 0.30FEATURES _B5.00 + 0.20High speed switching _C20.85 + 0.30_D3.00 + 0.20High r
kgt30n120ndh.pdf

SEMICONDUCTORKGT30N120NDHTECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSIH(induction heating), microwave oven, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed
kgt30n120nda.pdf

SEMICONDUCTORKGT30N120NDATECHNICAL DATAGeneral DescriptionAKEC NPT IGBTs offer low switching losses, high energy efficiencyQ BNO Kand high avalanche ruggedness for soft switching application such asDIM MILLIMETERSgeneral inverters, etc._A +15.60 0.20_B4.80 + 0.20_C 19.90 + 0.20_D 2.00 0.20FEATURES +_d +1.00 0.20High speed switching_E3.
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: APTGF75DH120T | HGT1S7N60B3D | RCM10N40 | MMG40A120B7HN | APTGT300A170D3 | CM50DY-24H | MIXA30WB1200TMI
History: APTGF75DH120T | HGT1S7N60B3D | RCM10N40 | MMG40A120B7HN | APTGT300A170D3 | CM50DY-24H | MIXA30WB1200TMI



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