IGW40N65H5A Todos los transistores

 

IGW40N65H5A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IGW40N65H5A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 74 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 43 pF
   Paquete / Cubierta: TO247
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IGW40N65H5A Datasheet (PDF)

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IGW40N65H5A

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW40N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW40N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson

 4.1. Size:2247K  infineon
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IGW40N65H5A

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP40N65H5, IGW40N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP40N65H5, IGW40N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switchin

 4.2. Size:3337K  infineon
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IGW40N65H5A

 4.3. Size:1787K  infineon
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IGW40N65H5A

AIGW40N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature

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