IGW40N65H5A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW40N65H5A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 74 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.66 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 43 pF
Paquete / Cubierta: TO247
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IGW40N65H5A Datasheet (PDF)
igw40n65h5a.pdf
IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyIGW40N65H5A650V IGBTHigh speed switching series fifth generationData sheetIndustrial Power ControlIGW40N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and reson
igw40n65h5.pdf
IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyIGP40N65H5, IGW40N65H5650V IGBT high speed switching series fifth generationData sheetIndustrial Power ControlIGP40N65H5, IGW40N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switchin
aigw40n65h5.pdf
AIGW40N65H5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: C High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low gate charge Q EG Maximum junction temperature
Otros transistores... AUIRGB4062D1 , AUIRGS4062D1 , AUIRGSL4062D1 , KGF40N60KDA , KGT30N135KDH , KGT30N135NDH , IKD15N60RA , IGW40N65F5A , IKW50N60H3 , IKW40N65F5A , IKW40N65H5A , IRGB4640D , IRGP4062-E , IRGP4262D , IRGP4640 , IRGP4640D , IRGP4740D .
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Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2