IRGB4640D Todos los transistores

 

IRGB4640D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGB4640D
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 129 pF
   Paquete / Cubierta: TO220AB

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IRGB4640D Datasheet (PDF)

 ..1. Size:809K  international rectifier
irgb4640d.pdf

IRGB4640D
IRGB4640D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

 0.1. Size:792K  infineon
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf

IRGB4640D
IRGB4640D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CIC = 40A, TC =100C E E E E tSC 5s, TJ(max) = 175C E G C C C C C G G G G G EIRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

 8.1. Size:901K  international rectifier
irgb4620d.pdf

IRGB4640D
IRGB4640D

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 20A, TC =100C E E E E C GC C C G tSC 5s, TJ(max) = 175C G G G EIRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channelApp

 8.2. Size:428K  international rectifier
irgb4610d.pdf

IRGB4640D
IRGB4640D

IRGR4610DPbFIRGS4610DPbFIRGB4610DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeC CVCES = 600VCCIC = 10A, TC = 100CEEECG GGGtsc > 5s, Tjmax = 175CD-PakE D2-Pak TO-220ABVCE(on) typ. = 1.7V @ 6A IRGR4610DPbFIRGS4610DPbF IRGB4610DPbFn-channelGCEApplicationsGate Collector Emitter Appliance Drives Inverters

 8.3. Size:336K  international rectifier
irgb4615d.pdf

IRGB4640D
IRGB4640D

IRGS4615DPbFIRGB4615DPbFInsulated Gate Bipolar Transistor with Ultrafast Soft Recovery DiodeCCVCES = 600VCIC = 15A, TC = 100CEECGGtsc > 5s, Tjmax = 175CGEVCE(on) typ. = 1.55V @ 8ATO-220ABD2-Pakn-channelIRGB4615DPbFIRGS4615DPbFGCEGate Collector EmitterApplications Appliance Drives Inverters UPSFeatures BenefitsLow VCE(

 8.4. Size:1268K  international rectifier
irgb4630d.pdf

IRGB4640D
IRGB4640D

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode CVCES = 600V C C C C IC = 30A, TC =100C E E E GE C tSC 5s, TJ(max) = 175C C C C G G G G EIRGS4630DPbF IRGB4630DPbF IRGP4630D-EPbF IRGP4630DPbF VCE(ON) typ. = 1.65V @ IC = 18A TO-220AC TO-247AD n-channel D2Pak TO-247AC Appl

 8.5. Size:858K  international rectifier
irgb4607d.pdf

IRGB4640D
IRGB4640D

IRGR4607DPbF IRGS4607DPbF IRGB4607DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CC C C IC = 7.0A, TC =100C E E E G C C tSC 5s, TJ(max) = 175C G G G EIRGR4607DPbF IRGS4607DPbF IRGB4607DPbF VCE(ON) typ. = 1.75V @ IC = 4.0A n-channel TO-220AB D-Pak D2Pak Applications G C E Industrial Motor Drive

 8.6. Size:966K  infineon
irgb4620dpbf irgib4620dpbf irgp4620dpbf irgs4620dpbf.pdf

IRGB4640D
IRGB4640D

IR IGBT IRGB4620DPbF IRGIB4620DPbF IRGP4620D(-E)PbF IRGS4620DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 20A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.55V @ IC = 12A IRGP4620DPbF IRGP4620D-EPbF IRGB4620DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust

 8.7. Size:1323K  infineon
irgb4630dpbf irgib4630dpbf irgp4630dpbf irgs4630dpbf.pdf

IRGB4640D
IRGB4640D

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100C tSC 5s, TJ(max) = 175C E C E E G C G C G VCE(ON) typ. = 1.65V @ IC = 18A IRGP4630DPbF IRGP4630D-EPbF IRGB4630DPbF TO-247AC TO-247AD TO-220AB CC Applications Indust

Otros transistores... KGF40N60KDA , KGT30N135KDH , KGT30N135NDH , IKD15N60RA , IGW40N65F5A , IGW40N65H5A , IKW40N65F5A , IKW40N65H5A , TGAN20N135FD , IRGP4062-E , IRGP4262D , IRGP4640 , IRGP4640D , IRGP4740D , IRGS4640D , IRGSL4640D , MM25G120B .

 

 
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