IRGS4640D Todos los transistores

 

IRGS4640D IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGS4640D

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 22 nS

Coesⓘ - Capacitancia de salida, typ: 129 pF

Encapsulados: TO263

 Búsqueda de reemplazo de IRGS4640D IGBT

- Selección ⓘ de transistores por parámetros

 

IRGS4640D datasheet

 ..1. Size:809K  international rectifier
irgs4640d.pdf pdf_icon

IRGS4640D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

 0.1. Size:792K  infineon
irgs4640dpbf irgsl4640dpbf irgb4640dpbf irgp4640dpbf irgp4640d-epbf.pdf pdf_icon

IRGS4640D

IRGS4640DPbF IRGSL4640DPbF IRGB4640DPbF IRGP4640D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 40A, TC =100 C E E E E tSC 5 s, TJ(max) = 175 C E G C C C C C G G G G G E IRGP4640D-EPbF VCE(ON) typ. = 1.60V @ IC = 24A IRGS4640DPbF IRGP4640DPbF IRGSL4640DPbF IRGB4640DPbF TO-247AD D2Pak TO-247AC

 8.1. Size:336K  international rectifier
irgs4615d.pdf pdf_icon

IRGS4640D

IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C VCES = 600V C IC = 15A, TC = 100 C E E C G G tsc > 5 s, Tjmax = 175 C G E VCE(on) typ. = 1.55V @ 8A TO-220AB D2-Pak n-channel IRGB4615DPbF IRGS4615DPbF GCE Gate Collector Emitter Applications Appliance Drives Inverters UPS Features Benefits Low VCE(

 8.2. Size:901K  international rectifier
irgs4620d.pdf pdf_icon

IRGS4640D

IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C VCES = 600V C C C C IC = 20A, TC =100 C E E E E C G C C C G tSC 5 s, TJ(max) = 175 C G G G E IRGS4620DPbF IRGB4620DPbF IRGP4620DPbF IRGP4620D-EPbF VCE(ON) typ. = 1.55V @ IC = 12A D2Pak TO-220AC TO-247AC TO-247AD n-channel App

Otros transistores... IKW40N65F5A , IKW40N65H5A , IRGB4640D , IRGP4062-E , IRGP4262D , IRGP4640 , IRGP4640D , IRGP4740D , GT30F133 , IRGSL4640D , MM25G120B , MMG40A120B7HN , MMG75HB060H6EN , NGTB30N60IHLWG , NGTB40N60IHLWG , NGTB45N60S , NGTB45N60SWG .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt | 2sa1360 | p60nf06 datasheet | 2sc4468 | ru6888r

 

 

↑ Back to Top
.