MM25G120B Todos los transistores

 

MM25G120B IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MM25G120B

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 250 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Encapsulados: TO247

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MM25G120B datasheet

 ..1. Size:152K  macmic
mm25g120b.pdf pdf_icon

MM25G120B

MM25G120B 1200V 25A IGBT October 2012 PRELIMINARY RoHS Compliant FEATURES Low switching losses Low EMI Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery VCE(sat) with positive temperature coefficient APPLICATIONS High frequency switching application Medical applications 1.Gate Motion/servo con

 9.1. Size:212K  macmic
mm25g3u120bx.pdf pdf_icon

MM25G120B

MM25G3U120BX 1200V 25A IGBT August 2018 Preliminary RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical ap

 9.2. Size:171K  macmic
mm25g3t120b.pdf pdf_icon

MM25G120B

MM25G3T120B 1200V 25A IGBT April 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery 1 2 3 APPLICATIONS High frequency switching application 1.Gate Medical appli

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