MMG50H120X6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMG50H120X6TN
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Qgⓘ - Carga total de la puerta, typ: 470 nC
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
MMG50H120X6TN Datasheet (PDF)
mmg50h120x6tn.pdf

MMG50H120X6TN1200V 50A Six-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT Chip(IGBT3 Trench+Field Stop technology)Diode Chip(Emcon3 wheeling diode) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated
mmg50h120x6tc.pdf

MMG50H120X6TC1200V 50A Six-Pack ModuleMay 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba
mmg50h120x6hn.pdf

MMG50H120X6HN1200V 50A Six-Pack ModuleJune 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(T4 Fast Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper baseplate and soldering
mmg50h120h6hn.pdf

MMG50H120H6HN1200V 50A Four-Pack ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching l
Otros transistores... IKP40N65F5 , IKW40N65F5 , NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , NCE80TD65BT , MMG50S120B6TN , MMG50W120XB6TN , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB , STGB30V60DF .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
bu508a | bc560c | ksa1220ay | irf 830 | mpsa56 transistor | transistor 2222a | 8050 transistor | bc238