MMG50S120B6TN Todos los transistores

 

MMG50S120B6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG50S120B6TN
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Qgⓘ - Carga total de la puerta, typ: 470 nC
   Paquete / Cubierta: MODULE

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MMG50S120B6TN Datasheet (PDF)

 ..1. Size:347K  macmic
mmg50s120b6tn.pdf

MMG50S120B6TN
MMG50S120B6TN

MMG50S120B6TN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPP

 2.1. Size:221K  macmic
mmg50s120b6tc.pdf

MMG50S120B6TN
MMG50S120B6TN

MMG50S120B6TC1200V 50A IGBT ModuleSeptember 2020 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency swi

 3.1. Size:342K  macmic
mmg50s120b6hn.pdf

MMG50S120B6TN
MMG50S120B6TN

MMG50S120B6HN1200V 50A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(T4 Fast Trench+Field Stop technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching loss

 3.2. Size:199K  macmic
mmg50s120b6uc.pdf

MMG50S120B6TN
MMG50S120B6TN

MMG50S120B6UC1200V 50A IGBT ModuleDecember 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recoveryAPPLICATIONS Welding Machine Power Supplies OthersIGBT-invert

Otros transistores... IKW40N65F5 , NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , IRG7S313U , MMG50W120XB6TN , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB , STGB30V60DF , STGB30V60F .

 

 
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