MMG50W120XB6TN Todos los transistores

 

MMG50W120XB6TN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMG50W120XB6TN
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Paquete / Cubierta: MODULE

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MMG50W120XB6TN Datasheet (PDF)

 ..1. Size:478K  macmic
mmg50w120xb6tn.pdf

MMG50W120XB6TN
MMG50W120XB6TN

MMG50W120XB6TN1200V 50A PIM ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES High level of integration IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 1.1. Size:1433K  macmic
mmg50w120xb6tc.pdf

MMG50W120XB6TN
MMG50W120XB6TN

MMG50W120XB6TC1200V 50A PIM ModuleJuly 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper base

 4.1. Size:1288K  macmic
mmg50w120xt6tc.pdf

MMG50W120XB6TN
MMG50W120XB6TN

MMG50W120XT6TC1200V 50A Rectifier+Inverter ModuleJuly 2020 Preliminary RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulat

 8.1. Size:232K  macmic
mmg50w060xb6en.pdf

MMG50W120XB6TN
MMG50W120XB6TN

MMG50W060XB6EN600V 50A PIM ModuleFebruary 2017 Version 1 RoHS CompliantPRODUCT FEATURES High level of integration 600V IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated coppe

Otros transistores... NGTB40N60FLWG , STGW15S120DF3 , STGW20IH125DF , STGWA15S120DF3 , STGWT20IH125DF , SML75HB06 , MMG50H120X6TN , MMG50S120B6TN , FGPF4533 , NGTB30N120L , NGTB30N120LWG , NGTB40N120L , NGTB40N120LWG , STGB30H60DLFB , STGB30V60DF , STGB30V60F , STGP30V60DF .

 

 
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