STGW20H65FB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure

STGW20NB60HN-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60H 600 V

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

STGP20NB60KSTGW20NB60KN-CHANNEL 20A - 600V - TO-220/TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGP20NB60K 600 V

STGFW20V60F, STGW20V60F, STGWT20V60F600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Very high speed switching series3 Tail-less switching off2 Low saturation voltage: VCE(sat) = 1.8 V (typ.) 1TO-3PF@ IC = 20 ATAB Tight parameters distribution Safe par

STGB20NC60V, STGP20NC60V, STGW20NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability3 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor driversDPAK HF, SMPS and PFC in both hard

STGW20NB60HD N-CHANNEL 20A - 600V TO-247PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60HD 600 V

STGW20NC60VDN-CHANNEL 30A - 600V TO-247Very Fast PowerMESH IGBTTable 1: General Features Figure 1: PackageTYPE VCES VCE(sat) (Max) IC @25C @100CSTGW20NC60VD 600 V

STGW20NB60KDN-CHANNEL 20A - 600V - TO-247SHORT CIRCUIT PROOF PowerMESH IGBTTYPE VCES VCE(sat) ICSTGW20NB60KD 600 V

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete

STGW20IH125DF STGWT20IH125DF1250 V, 20 A IH series trench gate field-stop IGBTDatasheet - production dataFeaturesTAB Designed for soft commutation only Maximum junction temperature: TJ = 175 C Minimized tail current VCE(sat) = 2.0 V (typ.) @ IC = 15 A32 Tight parameters distribution312 Safe paralleling1 Very low VF soft recovery co-pa

STGB20NC60V - STGP20NC60VSTGW20NC60V30 A - 600 V - very fast IGBTFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility)3 High current capability 3221 1ApplicationsTO-247 TO-22031 High frequency inverters UPS, motor drivers DPAK HF, SMPS and PFC in both hard switch and resonant topologi