STGW30V60F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGW30V60F 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
trⓘ - Tiempo de subida, typ: 16 nS
Coesⓘ - Capacitancia de salida, typ: 120 pF
Encapsulados: TO247
📄📄 Copiar
Búsqueda de reemplazo de STGW30V60F IGBT
- Selecciónⓘ de transistores por parámetros
STGW30V60F datasheet
..1. Size:1472K st
stgw30v60f.pdf 
STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App
5.1. Size:1905K st
stgw30v60df.pdf
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma
5.2. Size:1911K st
stgb30v60df stgp30v60df stgw30v60df stgwt30v60df.pdf
STGB30V60DF, STGP30V60DF, STGW30V60DF, STGWT30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data TAB Features TAB Maximum junction temperature TJ = 175 C Tail-less switching off 3 3 2 1 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 D PAK TO-220 Tight parameters distribution TAB Safe paralleling Low therma
8.1. Size:328K st
stgw30nb60hd.pdf
STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESH IGBT TYPE VCES VCE(sat) (Max) IC STGW30NB60HD 600 V
8.2. Size:300K st
stgw30nb60h.pdf
STGW30NB60H N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT TYPE VCES VCE(sat) IC STGW30NB60H 600 V
8.3. Size:419K st
stgw30n120kd.pdf
STGW30N120KD STGWA30N120KD 30 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features Low on-losses High current capability Low gate charge Short circuit withstand time 10 s IGBT co-packaged with Ultrafast free-wheeling 3 diode 2 1 Applications TO-247 Motor control Description Figure 1. Internal schematic diagram This high voltage and short
8.4. Size:1635K st
stgw30h65fb.pdf
STGFW30H65FB, STGW30H65FB, STGWT30H65FB Trench gate field-stop IGBT, HB series 650 V, 30 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 30 A TO-3PF Tight parameters distribution 1 1 1 Safe paralleling 3 Low t
8.5. Size:432K st
stgfw30h65fb stgw30h65fb.pdf
STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 1 1 1 VCE(sat) = 1.55 V (typ.) at IC = 30 A 3 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applicati
8.6. Size:350K st
stgw30nc60vd.pdf
STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features High current capability High frequency operation up to 50 KHz Very soft ultra fast recovery antiparallel diode Applications 3 2 High frequency inverters, UPS 1 Motor drive TO-247 long leads SMPS and PFC in both hard switch and resonant topologies Description Figure 1. Internal schemat
8.7. Size:302K st
stgw30nc120hd.pdf
STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features IC VCE(sat) Type VCES @25 C @100 C STGW30NC120HD 1200V
8.8. Size:1945K st
stgw30h60df.pdf
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I
8.9. Size:345K st
stgw30nc60kd.pdf
STGW30NC60KD 30 A - 600 V - short circuit rugged IGBT Features Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 s IGBT co-packaged with ultra fast free-wheeling diode 3 2 1 Applications TO-247 High frequency inverters Motor drivers Description Figure 1. Internal schematic diagra
8.10. Size:419K st
stgw30h60dfb.pdf
STGW30H60DFB, STGWT30H60DFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 1.55 V (typ.) @ IC = 30 A 3 3 2 2 Tight parameters distribution 1 1 TO-247 Safe paralleling TO-3P Low thermal resist
8.11. Size:542K st
stgw30nc60wd.pdf
STGW30NC60WD 30 A, 600 V ultra fast IGBT Features High frequency operation Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel diode Applications 3 2 1 High frequency motor controls, inverters, UPS TO-247 HF, SMPS and PFC in both hard switch and resonant topologies Description This IGBT utilizes the advan
8.12. Size:1739K st
stgb30h60dlfb stgw30h60dlfb.pdf
STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T
8.13. Size:1944K st
stgb30h60df stgf30h60df stgp30h60df stgw30h60df.pdf
STGB30H60DF, STGF30H60DF, STGP30H60DF, STGW30H60DF 600 V, 30 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB High speed switching Tight parameters distribution 3 1 3 Safe paralleling 2 1 D PAK Low thermal resistance TO-220FP Short circuit rated TAB Ultrafast soft recovery antiparallel diode Applications 3 3 I
8.14. Size:575K st
stgw30n90d.pdf
STGW30N90D 30 A, 900 V very fast IGBT Features Low on-losses Low on-voltage drop (VCE(sat)) High current capability Low gate charge Ideal for soft switching application 3 2 1 Application TO-247 Induction heating Description This IGBT utilizes the advanced PowerMESH process resulting in an excellent trade-off Figure 1. Internal schematic diagram bet
8.15. Size:1739K st
stgw30h60dlfb.pdf
STGB30H60DLFB, STGW30H60DLFB Trench gate field-stop IGBT, HB series 600 V, 30 A high speed Datasheet - production data Features Designed for soft commutation only Maximum junction temperature TJ = 175 C TAB High speed switching series Minimized tail current 3 1 3 VCE(sat) = 1.55 V (typ.) @ IC = 30 A 2 D2PAK 1 Low VF soft recovery co-packaged diode T
8.16. Size:698K st
stgw30h60dfb stgwa30h60dfb stgwt30h60dfb.pdf
STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage VCE(sat) = 1.55 V (typ.) @ IC = 30 A TAB Tight parameter distribution Safe para
8.17. Size:562K st
stgw30m65df2 stgwa30m65df2.pdf
STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss in TO-247 and TO-247 long leads packages Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.55 V (typ.) @ I = 30 A CE(sat) C Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery
Otros transistores... STGW15H120DF2, STGW15H120F2, STGW20H65FB, STGW30H60DF, STGW30H60DFB, STGW30H60DLFB, STGW30H65FB, STGW30V60DF, MBQ60T65PES, STGWA15H120DF2, STGWA15H120F2, STGWT20H65FB, STGWT30H60DFB, STGWT30H65FB, STGWT30V60DF, STGWT30V60F, RJP60F5DPK
