STGWA15H120DF2 Todos los transistores

 

STGWA15H120DF2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STGWA15H120DF2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 7.4 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Paquete / Cubierta: TO247
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STGWA15H120DF2 Datasheet (PDF)

 ..1. Size:827K  st
stgwa15h120df2.pdf pdf_icon

STGWA15H120DF2

STGW15H120DF2, STGWA15H120DF2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3TJ=150 C2 21 1 Safe parallelingTO-247T

 ..2. Size:594K  st
stgw15h120df2 stgwa15h120df2.pdf pdf_icon

STGWA15H120DF2

STGW15H120DF2, STGWA15H120DF2DatasheetTrench gate field-stop IGBT, H series 1200 V, 15 A high speedFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current3 VCE(sat) = 2.1 V @ IC = 15 A23121 5 s minimum short circuit withstand time at TJ = 150 CTO-247 TO-247 long leads Safe paralleling Low the

 3.1. Size:796K  st
stgwa15h120f2.pdf pdf_icon

STGWA15H120DF2

STGW15H120F2, STGWA15H120F2Trench gate field-stop IGBT, H series 1200 V, 15 A high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 32 2 TJ=150 C1 1 Safe parallelingTO-247TO-2

 7.1. Size:1049K  st
stgwa15m120df3.pdf pdf_icon

STGWA15H120DF2

STGW15M120DF3 STGWA15M120DF3Trench gate field-stop IGBT, M series 1200 V, 15 A low lossDatasheet - production dataFeatures 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance3 Soft and fast recovery antiparallel diode21ApplicationsTO-247 Industria

Otros transistores... STGW15H120F2 , STGW20H65FB , STGW30H60DF , STGW30H60DFB , STGW30H60DLFB , STGW30H65FB , STGW30V60DF , STGW30V60F , GT50JR22 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D .

History: NCE07TD60BK | MMG75S120B6UN | AFGY100T65SPD | IRG4BC20UDPBF | IXBF50N360 | APT30GT60BRD | MG17200D-BN4MM

 

 
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