STGWA15H120DF2 Todos los transistores

 

STGWA15H120DF2 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWA15H120DF2

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.4 V @25℃

trⓘ - Tiempo de subida, typ: 7.4 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO247

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STGWA15H120DF2 datasheet

 ..1. Size:827K  st
stgwa15h120df2.pdf pdf_icon

STGWA15H120DF2

STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 T

 ..2. Size:594K  st
stgw15h120df2 stgwa15h120df2.pdf pdf_icon

STGWA15H120DF2

STGW15H120DF2, STGWA15H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 3 VCE(sat) = 2.1 V @ IC = 15 A 2 3 1 2 1 5 s minimum short circuit withstand time at TJ = 150 C TO-247 TO-247 long leads Safe paralleling Low the

 3.1. Size:796K  st
stgwa15h120f2.pdf pdf_icon

STGWA15H120DF2

STGW15H120F2, STGWA15H120F2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short-circuit withstand time at 3 3 2 2 TJ=150 C 1 1 Safe paralleling TO-247 TO-2

 7.1. Size:1049K  st
stgwa15m120df3.pdf pdf_icon

STGWA15H120DF2

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

Otros transistores... STGW15H120F2 , STGW20H65FB , STGW30H60DF , STGW30H60DFB , STGW30H60DLFB , STGW30H65FB , STGW30V60DF , STGW30V60F , GT30J124 , STGWA15H120F2 , STGWT20H65FB , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D .

 

 

 


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