STGWT20H65FB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STGWT20H65FB
Tipo de transistor: IGBT
Código de marcado: GWT20H65FB
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 260 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 80 pF
Qgⓘ - Carga total de la puerta, typ: 120 nC
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de STGWT20H65FB IGBT
STGWT20H65FB Datasheet (PDF)
stgwt20h65fb.pdf

STGFW20H65FB, STGW20H65FB, STGWT20H65FBTrench gate field-stop IGBT, HB series 650 V, 20 A high speedDatasheet - production dataTABFeatures Maximum junction temperature: TJ = 175 C High speed switching series3 Minimized tail current21 VCE(sat) = 1.55 V (typ.) @ IC = 20 ATO-3P Tight parameters distribution111 Safe paralleling3 Low th
stgwt20h60df.pdf

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure
stgw20h60df stgwt20h60df.pdf

STGW20H60DF, STGWT20H60DF600 V, 20 A high speed trench gate field-stop IGBTDatasheet - production dataFeatures High speed switchingTAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated3 322 Ultrafast soft recovery antiparallel diode11TO-247TO-3PApplications Motor control UPS, PFCFigure
stgwt20v60df.pdf

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF600 V, 20 A very high speed trench gate field-stop IGBTDatasheet - production dataFeaturesTABTAB Maximum junction temperature: TJ = 175 C Very high speed switching series332 Tail-less switching off11 Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 DPAK@ IC = 20 ATAB Tight paramete
Otros transistores... STGW30H60DF , STGW30H60DFB , STGW30H60DLFB , STGW30H65FB , STGW30V60DF , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , FGD4536 , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A .
History: 2M410G | SKM500GA123D | IXSH25N120AU1 | VWI15-12P1 | NGTB30N65IHL2WG | NGTB50N120FL2WG | IXGK35N120B
History: 2M410G | SKM500GA123D | IXSH25N120AU1 | VWI15-12P1 | NGTB30N65IHL2WG | NGTB50N120FL2WG | IXGK35N120B



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