STGWT20H65FB Todos los transistores

 

STGWT20H65FB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGWT20H65FB

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 260 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Coesⓘ - Capacitancia de salida, typ: 80 pF

Encapsulados: TO3P

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STGWT20H65FB datasheet

 ..1. Size:1497K  st
stgwt20h65fb.pdf pdf_icon

STGWT20H65FB

STGFW20H65FB, STGW20H65FB, STGWT20H65FB Trench gate field-stop IGBT, HB series 650 V, 20 A high speed Datasheet - production data TAB Features Maximum junction temperature TJ = 175 C High speed switching series 3 Minimized tail current 2 1 VCE(sat) = 1.55 V (typ.) @ IC = 20 A TO-3P Tight parameters distribution 1 1 1 Safe paralleling 3 Low th

 5.1. Size:1293K  st
stgwt20h60df.pdf pdf_icon

STGWT20H65FB

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure

 5.2. Size:1293K  st
stgw20h60df stgwt20h60df.pdf pdf_icon

STGWT20H65FB

STGW20H60DF, STGWT20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features High speed switching TAB Tight parameters distribution Safe paralleling Low thermal resistance Short-circuit rated 3 3 2 2 Ultrafast soft recovery antiparallel diode 1 1 TO-247 TO-3P Applications Motor control UPS, PFC Figure

 7.1. Size:2085K  st
stgwt20v60df.pdf pdf_icon

STGWT20H65FB

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB Maximum junction temperature TJ = 175 C Very high speed switching series 3 3 2 Tail-less switching off 1 1 Low saturation voltage VCE(sat) = 1.8 V (typ.) TO-220 D PAK @ IC = 20 A TAB Tight paramete

Otros transistores... STGW30H60DF , STGW30H60DFB , STGW30H60DLFB , STGW30H65FB , STGW30V60DF , STGW30V60F , STGWA15H120DF2 , STGWA15H120F2 , GT50JR22 , STGWT30H60DFB , STGWT30H65FB , STGWT30V60DF , STGWT30V60F , RJP60F5DPK , IRGP4650D , IGW50N65F5A , IGW50N65H5A .

History: TA49052 | SRE60N065FSU

 

 

 


History: TA49052 | SRE60N065FSU

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