STGW15M120DF3 Todos los transistores

 

STGW15M120DF3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGW15M120DF3

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 259 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 12 nS

Coesⓘ - Capacitancia de salida, typ: 118 pF

Encapsulados: TO247

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STGW15M120DF3 datasheet

 ..1. Size:1018K  st
stgw15m120df3 stgwa15m120df3.pdf pdf_icon

STGW15M120DF3

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

 ..2. Size:1049K  st
stgw15m120df3.pdf pdf_icon

STGW15M120DF3

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 15 A Tight parameters distribution Safer paralleling Low thermal resistance 3 Soft and fast recovery antiparallel diode 2 1 Applications TO-247 Industria

 8.1. Size:736K  st
stgw15s120df3.pdf pdf_icon

STGW15M120DF3

STGW15S120DF3, STGWA15S120DF3 Trench gate field-stop IGBT, S series 1200 V, 15 A low drop Datasheet - production data Features 10 s of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 15 A Tight parameter distribution Safer paralleling 3 Low thermal resistance 2 1 Soft and fast recovery antiparallel diode TO-247 TO-247 long leads Applicat

 8.2. Size:827K  st
stgw15h120df2.pdf pdf_icon

STGW15M120DF3

STGW15H120DF2, STGWA15H120DF2 Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 15 A 5 s minimum short circuit withstand time at 3 3 TJ=150 C 2 2 1 1 Safe paralleling TO-247 T

Otros transistores... KGF30N135NDH , IRGP4078D , NGTB15N120IH , NGTB15N120IHWG , IHW50N65R5 , IKW50N65WR5 , STGB40V60F , STGP40V60F , IRG7IC28U , STGW40H60DLFB , STGW40H65DFB , STGW40H65FB , STGW40V60DF , STGW40V60DLF , STGW40V60F , STGWA15M120DF3 , STGWT40H60DLFB .

History: STGD4M65DF2 | SL40T65FL | STGF15M65DF2 | IXSR35N120BD1 | IXXH100N60C3 | STGB35N35LZ | NCE80TD60BT

 

 

 

 

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