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HGTG10N120BN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTG10N120BN

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 35

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación:

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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HGTG10N120BN Datasheet (PDF)

1.1. hgtg10n120bnd.pdf Size:106K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 35A, 1200V, TC = 25oC The HGTG10N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT family. IGBTs

5.1. hgtg12n60a4d hgtp12n60a4d hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

5.2. hgtg12n60a4 hgtp12n60a4 hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

 5.3. hgtg12n60c3d.pdf Size:120K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i

5.4. hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Size:138K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage

 5.5. hgtg18n120bnd.pdf Size:183K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTG18N120BND Data Sheet March 2007 54A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 54A, 1200V, TC = 25oC The HGTG18N120BND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT family. IGBTs comb

5.6. hgtg11n120cnd.pdf Size:105K _fairchild_semi

HGTG10N120BN
HGTG10N120BN

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT family. IGBTs

5.7. hgtg12n60c3d .pdf Size:102K _harris_semi

HGTG10N120BN
HGTG10N120BN

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high

5.8. hgtg12n60d1d.pdf Size:46K _harris_semi

HGTG10N120BN
HGTG10N120BN

S E M I C O N D U C T O R HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package JEDEC STYLE TO-247 12A, 600V Latch Free Operation EMITTER COLLECTOR Typical Fall Time <500ns GATE Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) With Anti-Parallel Diode tRR < 60ns Description The IGBT is a MOS gated high voltage switching

5.9. hgtg12n60c3d.pdf Size:106K _harris_semi

HGTG10N120BN
HGTG10N120BN

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device

Otros transistores... HGTD7N60B3 , HGTD7N60B3S , HGTD7N60C3 , HGTD7N60C3S , HGTD7N60C3S9A , HGTD8P50G1 , HGTD8P50G1S , HGTD8P50G1S9A , SGP10N60A , HGTG10N120BND , HGTG11N120CN , HGTG11N120CND , HGTG12N60A4 , HGTG12N60A4D , HGTG12N60B3D , HGTG12N60C3D , HGTG12N60C3DR .

 

 
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